Freescale Semiconductor
Advance Information
Document Number: MMM6025
Rev. 5.1, 03/2005
MMM6025
MMM6025
Quad-Band GSM/GPRS Power
Amplifier Front-End Module with
PA and Antenna Switch
Device
MMM6025
Package Information
Case 1603-2
9.85
×
9.0
×
1.4 mm HDI
(Organic Multi-Chip Module)
Ordering Information
Operating
Temp. Range
Package
–20° to 70°C HDI Module
–20° to 70°C HDI Module
Tape and Reel
MMM6025R2
1
Introduction
Contents
1
2
3
4
5
6
7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Functional Block Diagram . . . . . . . . . . . . . . . 2
Electrical Characteristics . . . . . . . . . . . . . . . 2
RF Specifications . . . . . . . . . . . . . . . . . . . . . . 4
Signal Descriptions . . . . . . . . . . . . . . . . . . . 11
Package Information . . . . . . . . . . . . . . . . . . 14
Product Documentation . . . . . . . . . . . . . . . . 16
The MMM6025 is a 50
Ω
Tx Power Amplifier
Front-End Module for quad- and tri-band GSM/GPRS
handset applications, functioning over the GSM850,
EGSM, DCS, and PCS transmit and receive frequency
bands. It is compatible with GSM/GPRS Class 12
operating modes. To simplify radio front-end design
requirements, power amplification, power coupling,
power detection, low pass filtering, and antenna
switching functions are integrated into the Power
Amplifier Front-End Module. Transmit/receive path and
enable functions are controlled through 0/2.8 V logic
inputs.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2004, 2005. All rights reserved.
Functional Block Diagram
2
Functional Block Diagram
Figure 1
is a functional block diagram of the quad-band (GSM850, EGSM, DCS, and PCS) power
amplifier module.
VDD3_HB
VDDB_HB,
VDD1_HB
VDD2_HB
RX_CEL
RX_GSM
RX_PCS
RX_DCS
MATCH
MATCH
MMM6025
GSM/GPRS PA MODULE
850/900/1800/1900
TXIN_HB
MATCH
PRE-
DRIVER
DRIVER
FINAL
MATCH
Coupler
Harmon ic
Filter
VAPC
EN_TX
VREG_2.8
BIAS CONTROL
SP6T
ANTENNA
TXIN_LB
MATCH
PRE-
DRIVER
Coupler
DRIVER
FINAL
MATCH
Harmonic
Filter
MATCH
VDDB_LB,
VDD1_LB
MATCH
POWER
DETECTION
VREF
VDET
EN_DET
ANTENNA
CONTROL
EUB_US
EN_ANT_TX
LOWB_HIGH
VDD2_LB
VDD3_LB
EN_DET_PA
Figure 1. Functional Block Diagram
3
Electrical Characteristics
Table 1. Maximum Ratings
Rating
Symbol
Vdd
P
in
T
A
Tstg
T
J
Value
7.0
11
–20 to 70
–40 to 125
125
Unit
V
dBm
°C
°C
°C
Drain Supply Voltages
RF Input Power
Operating (Ambient) Temperature Range
Storage Temperature
Junction Temperature
Note:
Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted
to the limits in the Electrical Characteristics or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
≤
150 V and Machine Model (MM)
≤
50 V.
Additional ESD data available upon request.
MMM6025 Advance Information, Rev. 5.1
2
Freescale Semiconductor
Electrical Characteristics
Table 2. Recommended Operating Conditions
Characteristic
Drain Supply Voltage
Power Control Ramp Voltage
RF Input Power
Symbol
Vdd
V
RAMP
P
in
Min
2.8
0.1
5
Typ
3.2
-
-
Max
4.5
2.2
11
Unit
V
V
dBm
Table 3. DC Specifications
Characteristic
Voltage PA I (Drain Supplies)
Transmitter Off
Transmitter On
PA Output Control Voltage
PA Output Control Current
Detector PA Enable Voltage
1
High
Low
Detector PA Enable Current
1
Source
Sink
Mode Select Voltage
US (selects GSM850 or PCS)
EU (selects EGSM or DCS)
RX Band Select Current
Source
Sink
TX Antenna Enable Voltage
High
Low
TX Antenna Enable Current
Source
Sink
Voltage PA 2 (Regulated Supply)
Current Draw
BAND SELECT
High (DCS/PCS Bands Selected)
Low (GSM850/EGSM Bands Selected)
Symbol
Min
Typ
Max
Unit
Vdc
Vdd
(TX_off)
Vdd
(TX_on)
V
APC
I
APC
V
EN_DET_PA(H)
V
EN_DET_PA(L)
I
EN_DET_PA(H)
I
EN_DET_PA(L)
V
EUB_US(H)
V
EUB_US(L)
I
EUB_US(H)
I
EUB_US(L)
V
EN_ANT_TX(H)
V
EN_ANT_TX(L)
-
2.8
0.1
-3.0
2.5
0
-
-
2.5
0
-
-
2.5
0
-
-
2.65
-
2.5
0
3.6
3.2
0.2 to 2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.0
4.5
2.2
3.5
2.9
0.3
2.0
10
2.9
0.3
0.1
10
2.9
0.3
0.1
10
2.9
18
2.9
0.3
mA
µA
V
mA
V
V
LOWB_HIGH(H)
V
LOWB_HIGH(L)
mA
µA
Vdc
mA
µA
Vdc
V
mA
Vdc
I
EN_ANT_TX(H)
I
EN_ANT_TX(L)
V
REG28
I
REG28
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
3
RF Specifications
Table 3. DC Specifications (continued)
Characteristic
BAND SELECT Current Level
High
Low
Total module leakage current (Standby condition)
EN_DET_PA = 0.3 V
EUB_US = EN_ANT_TX = +0.3 V
LOWB_HIGH = 0.3 V
V
APC
= 0.1 V
V
REG_IN
= 0 V or 2.775 V
Temp = 23 to 27°C
Vdd = 3.8 V
1
Symbol
Min
Typ
Max
Unit
µA
I
LOWB_HIGH(H)
I
LOWB_HIGH(L)
I
Vdd(off)
-
-
-
-
-
5.0
10
10
7.0
µA
The MMM6025 pinout is compatible with that of MMM6022,
except
pin 8.
MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET.
The following table provides additional details on MMM6025 orderable parts.
Table 4. Orderable Parts Details
Device
Operating
Temp. Range
(TA)
–20° to 70°C
–20° to 70°C
Package
RoHS
Compliant
Yes
Yes
Pb-Free
MSLLevel
SolderTemp.
MMM6025
MMM6025R2
HDI Module
HDI Module
Tape and Reel
Yes
Yes
3
3
250 °C
250 °C
4
RF Specifications
Table 5. EGSM Band Specifications
Characteristic
Symbol
Min
Typ
Max
Unit
This section details specifications for the EGSM, DCS, GSM850, and PCS bands.
EGSM BAND
(P
in
= 5.0 to 11 dBm, Vdd = 3.2 Vdc, V
APC
= 0.1 to 2.2 V pulsed, 25% duty cycle,
LOWB_HIGH = Low, EUB_US = Low, T
C
= 25°C ±5°C, unless otherwise noted.)
Operating Frequency
Transmit
Receive
Power Out
Power Out Low Voltage (Vdd = 2.8 V)
Power Added Efficiency (Saturated P
out
)
Power Control Range
1
Power Control Slope
2
f
880
925
P
o(max)
P
o(min)
PAE
P
o(range)
∆V
det
/∆V
APC
33
32
40
35
-
-
-
-
-
44
-
-
915
960
-
-
-
-
3.0
dBm
dBm
%
dB
V/V
MHz
MMM6025 Advance Information, Rev. 5.1
4
Freescale Semiconductor
RF Specifications
Table 5. EGSM Band Specifications (continued)
Characteristic
Power Control Frequency 3.0 dB BW
Power Control Response Time
3
Forward Isolation
4
Power Detector Voltage
1
Low Power
High Power
Harmonics
5
(P
out
Max = 33 dBm)
GSM RX Band Noise
5
(Vdd = 4.2 V, Saturated P
out
)
(P
out
= 33 dBm)
Symbol
PC3dB
t
PC
ISO1
ISO2
V
DET(low)
V
DET(high)
2f
0 –
15f
0
n
RX
(925 to 935 MHz)
n
RX
(935 to 960 MHz)
P
o_ot(min)
IL_RX
ISO_ANT_RX_CEL
ISO_ANT_RX_GSM
ISO_ANT_RX_DCS
ISO_ANT_RX_PCS
VSWR
CPLV
Rugg
Stab
P
out
_Temp Ambient 1
(P
out
= 6 dBm)
P
out
_Temp Ambient 2
(P
out
= 20 dBm)
P
out
_Temp Ambient 3
(P
out
= 33 dBm)
Min
1.0
-
-
-
40
1.0
-
-
-
31.5
-
27
27
27
27
-
-1.5
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
1.5
-41
-22
150
2.05
-33
-73
-84
-
1.4
-
-
-
-
2:1
1.5
dB
Unit
MHz
µs
dBm
mV
V
dBm
dBm/
100 kHz
dBm/
100 kHz
dBm
dB
dB
P
out
over Temp (Vdd = 2.8 V, T
A
= -20 to 70°C)
Insertion Loss from Antenna to RX_GSM
5
Tx - Rx Isolation
5
ANTENNA to RX_CEL
ANTENNA to RX_GSM
ANTENNA to RX_DCS
ANTENNA to RX_PCS
Input VSWR
Power Out Change due to Coupling Variations
(VSWR = 3:1 @ ANT Port)
6
Load Mismatch Stress (Ruggedness)
7
Stability - Spurious Output
8
Closed Loop Power Variation over Temperature
9
No performance degradation and no module
damage
-
-1.5
1.0
-0.5
-
-
-
-
-36
1.5
1.0
0.5
dBm
dB
dB
dB
1
2
3
4
5
6
7
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
Measurement made from 50% of V
APC
to 10%/90% of V
DET_OUT
final value, with pulsed V
APC
with a peak voltage in the range
of 0.1 to 2.2 V and both rise and fall edges.
Measured at antenna port, ISO1: P
in
= -10 dBm, EN_ANT_TX = 0 V, V
APC
= 0.1 V;
ISO2: P
in
= 11 dBm, EN_ANT_TX = 2.723 V, V
APC
= 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P
out
= 33 dBm
Output VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less
than or equal to 33dBm.
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
5
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