BZV85 series
Voltage regulator diodes
Rev. 03 — 10 November 2009
Product data sheet
1. Product profile
1.1 General description
Medium-power voltage regulator diodes in small hermetically sealed leaded
SOD66 (DO-41) glass packages.
The diodes are available in the normalized E24 approximately
±5
% tolerance range.
The series consists of 33 types with nominal working voltages from 3.6 V to 75 V.
1.2 Features
I
Total power dissipation: max. 1.3 W
I
Working voltage range:
nominal 3.3 V to 75 V (E24 range)
I
Small hermetically sealed glass
package
I
Tolerance series: approximately
±5
%
I
Non-repetitive peak reverse power
dissipation: max. 60 W
1.3 Applications
I
Stabilization purposes
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
T
amb
= 25
°C;
lead length 10 mm
P
ZSM
[1]
[2]
[3]
[1]
Conditions
I
F
= 50 mA
Min
-
-
-
-
Typ
-
-
-
-
Max
1
1
1.3
60
Unit
V
W
W
W
[2]
non-repetitive peak reverse
power dissipation
square wave;
t
p
= 100
µs
[3]
Device mounted on a Printed-Circuit Board (PCB) with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
T
j
= 25
°C
prior to surge
NXP Semiconductors
BZV85 series
Voltage regulator diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
k
a
Graphic symbol
1
2
006aaa152
[1]
The marking band indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BZV85 series
[1]
[1]
Type number
Description
hermetically sealed glass package; axial leaded;
2 leads
Version
SOD66
-
The series consists of 33 types with nominal working voltages from 3.3 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
The diodes are type branded.
Type number
BZV85 series
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
2 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
square wave;
t
p
= 100
µs
half sine wave;
t
p
= 10 ms
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 m
m
P
ZSM
T
j
T
stg
[1]
[2]
[3]
[2]
[1]
Conditions
Min
-
-
-
Max
500
see
Table 8
see
Table 8
1
Unit
mA
[1]
-
W
[3]
-
-
-
−65
1.3
60
200
+200
W
W
°C
°C
non-repetitive peak reverse
power dissipation
junction temperature
storage temperature
square wave;
t
p
= 100
µs
[1]
T
j
= 25
°C
prior to surge
Device mounted on a PCB with 1 cm
2
copper area per lead.
If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
3 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
6. Thermal characteristics
Table 6.
Symbol
R
th(j-t)
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to tie-point
thermal resistance from
junction to ambient
Conditions
lead length 4 mm
lead length 10 mm
[1]
Min
-
-
Typ
-
-
Max
110
175
Unit
K/W
K/W
Device mounted on a PCB with 1 cm
2
copper area per lead.
10
3
R
th(j-t)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
10
0.10
0.05
006aab844
0.02
0.01
0
1
10
−2
10
−1
1
10
10
2
10
3
t
p
(ms)
10
4
Fig 1.
Thermal resistance from junction to tie-point as a function of pulse duration;
lead length 4 mm
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 50 mA
Min
-
Typ
-
Max
1
Unit
V
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
4 of 10
NXP Semiconductors
BZV85 series
Voltage regulator diodes
Table 8.
Characteristics per type
T
j
= 25
°
C unless otherwise specified.
BZV85- Working
Cxxx
voltage
V
Z
(V)
at I
test
Min
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Max
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
Differential Temperature Test
resistance coefficient
current
I
test
r
dif
(Ω)
S
Z
(mV/K)
(mA)
at I
test
at I
test
Max
15
15
13
13
10
7
4
3.5
3
5
5
8
10
10
10
15
15
20
24
25
30
40
45
45
50
60
75
100
125
150
175
200
225
Min
−3.5
−3.5
−2.7
−2.0
−0.5
0
0.6
1.3
2.5
3.1
3.8
4.7
5.3
6.3
7.4
8.9
10.7
11.8
13.6
16.6
18.3
20.1
22.4
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
Max
−1.0
−1.0
0
0.7
2.2
2.7
3.6
4.3
5.5
6.1
7.2
8.5
9.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
32.0
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
Diode
Reverse
capacitance current
C
d
(pF)
I
R
(µA)
at f = 1 MHz;
V
R
= 0 V
Max
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
50
50
45
45
45
40
40
40
40
35
35
35
Max
50
10
5
3
3
2
2
2
1
0.7
0.7
0.2
0.2
0.2
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
19
21
23
25
27
30
33
36
39
43
48
53
Non-repetitive peak
reverse current
I
ZSM
at t
p
= 100
µs;
at t
p
= 10 ms;
T
amb
= 25
°C
T
amb
= 25
°C
V
R
(V) Max (A)
8.0
8.0
8.0
8.0
8.0
8.0
7.0
7.0
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
Max (mA)
2000
1950
1850
1800
1750
1700
1620
1550
1500
1400
1340
1200
1100
1000
900
760
700
600
540
500
450
400
380
350
320
296
270
246
226
208
186
171
161
BZV85_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 10 November 2009
5 of 10
嵌入式系统
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