NVMFD6H840NL
Power MOSFET
Features
80 V, 6.9 mW, 74 A, Dual N−Channel
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFD6H840NLWF
−
Wettable Flank Option for Enhanced
Optical Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
80
±20
74
52
90
45
14
10
3.1
1.5
336
−55
to
+175
75
297
260
A
°C
A
mJ
°C
1
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V
(BR)DSS
80 V
R
DS(ON)
MAX
6.9 mW @ 10 V
8.8 mW @ 4.5 V
I
D
MAX
74 A
Unit
V
V
A
G1
S1
G2
S2
D1
Dual N−Channel
D2
W
A
W
MARKING
DIAGRAM
D1 D1
DFN8 5x6
(SO8FL)
CASE 506BT
A
Y
W
ZZ
S1
G1
S2
G2
XXXXXX
AYWZZ
D2 D2
= Assembly Location
= Year
= Work Week
= Lot Traceability
D1
D1
D2
D2
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 4.7 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.67
48.7
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2019
April, 2019
−
Rev. 0
1
Publication Order Number:
NVMFD6H840NL/D
NVMFD6H840NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 64 V,
I
D
= 20 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 40 V; I
D
= 20 A
V
GS
= 10 V, V
DS
= 40 V; I
D
= 20 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 40 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.8
0.7
45
24
22
50
nC
ns
1.2
V
15
34
52
22
ns
2002
249
11
32
15
3.0
5.1
5.3
2.8
V
nC
pF
I
D
= 20 A
I
D
= 20 A
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
80
45.9
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
= 20 V
V
GS
= V
DS
, I
D
= 96
mA
1.2
−4.9
5.7
7.0
99
2.0
V
mV/°C
6.9
8.8
mW
S
V
DS
= 5 V, I
D
= 20 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFD6H840NL
TYPICAL CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
2
3
4
5
6
V
GS
= 2.4 V
7
8
2.6 V
2.8 V
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
0.5
T
J
= 25°C
V
DS
= 10 V
10 to 3.4 V
3.2 V
3.0 V
T
J
= 125°C
1.0
1.5
2.0
T
J
=
−55°C
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
10
I
D
= 20 A
T
J
= 25°C
8
Figure 2. Transfer Characteristics
8
T
J
= 25°C
7
V
GS
= 4.5 V
6
6
V
GS
= 10 V
4
5
2
3
4
5
6
7
8
9
10
4
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
2.0
1000
100
10
1
0.1
0.01
0.5
−50 −25
0.001
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
1.5
1.0
T
J
= 25°C
0
25
50
75
100
125
150
175
5
15
25
35
45
55
65
75
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFD6H840NL
TYPICAL CHARACTERISTICS
10K
C
iss
C, CAPACITANCE (pF)
1K
C
oss
100
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
Q
GS
Q
GD
V
DS
= 40 V
I
D
= 20 A
T
J
= 25°C
10
1
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
0
10
20
30
40
50
60
70
C
rss
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source vs. Total Charge
t
d(off)
t
f
t
r
t
d(on)
I
S
, SOURCE CURRENT (A)
V
GS
= 4.5 V
V
DS
= 64 V
I
D
= 20 A
V
GS
= 0 V
10
t, TIME (ns)
100
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
1
T
J
= 125°C
0.3
0.4
0.5
T
J
= 25°C
0.6
0.7
0.8
T
J
=
−55°C
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I
PEAK
, DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
T
J(initial)
= 25°C
10
T
J(initial)
= 100°C
10
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1
10
ms
0.5 ms
1 ms
10 ms
100
1000
0.1
1
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
AV
, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFD6H840NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
0.01
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFD6H840NLT1G
NVMFD6H840NLWFT1G
Marking
6H840L
840LWF
Package
DFN8
(Pb−Free)
DFN8
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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