Dual NPN Epitaxial Planar Transistor
Formosa MS
FMBT2222ADW1 & FMBT2222ADW2
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2,3
Switching time equivalent test circuits................................................ 4
Rating and characteristic curves........................................................ 5,6
Pinning information........................................................................... 7
Marking........................................................................................... 7
Suggested solder pad layout............................................................. 7
Packing information.......................................................................... 8
Reel packing.................................................................................... 9
Suggested thermal profiles for soldering processes............................. 9
High reliability test capabilities.......................................................... 10
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
10
Page 1
DS-231148
Dual NPN Epitaxial Planar Transistor
Formosa MS
Package outline
SOT-363
.087(2.20)
.079(2.00)
8°
FMBT2222ADW1 & FMBT2222ADW2
600mA Silicon NPN Epitaxial Planar
Transistor
Features
•
High collector-emitterbreakdien voltage.
•
•
•
•
•
(BV
CEO
= 40V@I
C
=10mA)
Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
Offer NPN+NPN in one package
Capable of 150mW power dissipation.
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FMBT2222ADW1-H.
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
.021(0.525)
Ref.
.026(0.65)Typ. .006(0.15)
.003(0.08)
.014(0.35)
.006(0.15)
.004(0.10)
Max.
.043(1.10)
.035(0.90)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-363
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
.016(0.40)
.012(0.30)
Dimensions in inches and (millimeters)
•
Polarity : See Diagram
•
Mounting Position : Any
•
Weight : Approximated 6.213mg
3
Q
4
2
1
3
Q
4
2
1
Q
Q
5
6
FMBT2222ADW1
5
6
FMBT2222ADW2
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation (1)
Thermal resistance
Storage temperature
Operating temperature
T
A
= 25
O
C
Junction to ambient
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
T
J
T
STG
MIN.
TYP.
MAX. UNIT
75
40
6.0
600
150
833
O
V
V
V
mA
mW
C/W
o
-55
-55
+150
+150
C
1.Device mounted on FR4 glass epoxy printed circuit board using
the minimum recommended footprint
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
10
Page 2
DS-231148
Dual NPN Epitaxial Planar Transistor
Formosa MS
CONDITIONS
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
BL
I
CEX
I
CBO
I
EBO
MIN.
75
40
6.0
20
10
0.01
10
100
nA
uA
TYP.
MAX. UNIT
V
V
V
nA
FMBT2222ADW1 & FMBT2222ADW2
Characteristics
(AT T =25 C unless otherwise noted)
o
A
Off characteristivs
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
Collector cutoff current
I
c
= 10uA, I
E
= 0
I
c
= 10mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CE
= 60Vdc, V
EB(off)
= 3.0Vdc
V
CE
= 60Vdc, V
EB(off)
= 3.0Vdc
V
CB
= 60Vdc, I
E
= 0
V
CB
= 60Vdc, I
E
= 0, T
A
=125
O
C
Emitter cutoff current
On characteristivs(3)
PARAMETER
CONDITIONS
I
c
= 0.1mA, V
CE
= 10V
I
c
= 1.0mA, V
CE
= 10V
I
c
= 10mA, V
CE
= 10V, T
A
= -55 C
DC current gain
I
c
= 150mA, V
CE
= 10V(3)
I
c
= 150mA, V
CE
= 1.0V(3)
I
c
= 500mA, V
CE
= 10V(3)
Collector-Emitter saturation voltage(3)
I
c
= 150mA, I
B
= 15mA
I
c
= 500mA, I
B
= 50mA
Base-Emitter saturation voltage(3)
I
c
= 150mA, I
B
= 15mA
I
c
= 500mA, I
B
= 50mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristivs
PARAMETER
CONDITIONS
Symbol
f
T
C
obo
C
ibo
h
ie
2.0
0.25
h
re
h
fe
50
75
h
oe
rb, Cc
NF
5.0
25
MIN.
300
8.0
25
0.8
1.25
8.0
4.0
300
375
35
200
150
4.0
ps
dB
umhos
-
X 10
-4
TYP.
MAX. UNIT
MHz
pF
Vdc
pF
Vdc
kohms
V
BE(sat)
0.60
V
CE(sat)
H
FE
O
I
C
= 0, V
EB
= 3.0Vdc
Symbol
MIN.
35
50
75
100
50
40
TYP.
MAX. UNIT
300
-
0.3
1.0
1.2
2.0
Vdc
Vdc
Current-gain-bandwidth product(4) I
C
= 20mA, V
CE
= 20V, f = 100MHz
Output capacitance
Input capacitance
Input impedance
V
CB
= 10V, I
E
= 0, f = 1.0MHz
V
EB
= 0.5V, I
C
= 0, f = 1.0MHz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 10mA, f = 1.0KHz
Voltage feeback radio
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 10mA, f = -1.0KHz
Small-signal current gain
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 10mA, f = -1.0KHz
Output admittance
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
V
CE
= 10V, I
C
= 10mA, f = -1.0KHz
Noise figure
Noise figure
V
CB
= 20V, I
E
= 20mA, f = 31.8MHz
V
CE
= 10V, I
C
= 100uA, RS = 1.0K ohms, f = 1.0KHZ
4.f
T
is defined as the frequency at which h
fe
extrapolates to unity.
Switching characteristivs
PARAMETER
Delay time
Rise time
Storage time
Fall time
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TEL:886-2-22696661
FAX:886-2-22696141
CONDITIONS
V
CC
= 30V, V
BE
=(off) = -0.5V, I
C
= 150mA, I
B1
= 15mA
Symbol
td
tr
ts
tf
MIN.
TYP.
MAX. UNIT
10
25
225
60
nS
V
CC
= 30V, I
C
=150mA, I
B1
= I
B2
= 15mA
Document ID
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
10
Page 3
DS-231148
Dual NPN Epitaxial Planar Transistor
Formosa MS
+ 30V
FMBT2222ADW1 & FMBT2222ADW2
Switching time equivalent test circuits
+ 16V
1.0 to 100μS
Duty cycle ~ 2.0%
1 KΩ
200Ω
0
- 2V
< 2nS
CS* < 10pF
Scope rise < 4 ns
*Total shunt capacitance of testjig, connectors, and cilloscope.
Fig. 1 Delay and rise time equivalent test circuit
+ 30V
200Ω
+ 16V
1.0 to 100uS
Duty cycle ~ 2.0%
1 KΩ
0
- 14V
< 20nS
-4V
Scope rise < 4 ns
*Total shunt capacitance of testjig, connectors, and cilloscope.
1N914
CS* < 10pF
Fig. 2 Storage and fall time equivalent test circuit
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
10
Page 4
DS-231148
Rating and characteristic curves (FMBT2222ADW1 & FMBT2222ADW2)
Fig. 3 DC Current Gain
hfe DC Current Gain (Normalized)
1000
100
10
0.1
1.0
10
Collector Current, Ic (mA)
100
1000
Fig. 4 Collect Saturation Region
V
CE
Collector-Emitter Voltage (Volts)
1.0
0.5
0
0.005
0.01
0.1
1.0
Collector Current, I
B
((mA)
10
50
Fig. 5 Turn-On Time vs Collector Current
200
100
50
Time (ns)
20
10
5.0
2.0
5.0
tr@V
CC
= 30V
td@V
EB(off)
= 2.0V
td@V
EB(off)
= 0V
I
C
/I
B
= 10
O
T
J
=25 C
Fig. 6 Turn-Off Time vs Collector Current
500
200
Time (ns)
100
50
20
10
tf
t's = ts - 1/8 tf
V
CC
= 30V
I
B1
= I
B2
T
J
=25
O
C
10
100
Collector Current, Ic (mA)
500
5.0
5.0
10
100
Collector Current, Ic (mA)
500
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
10
Page 5
DS-231148
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