SFH615AA/AGB/AGR/ABM/
ABL/AY/AB/BC
5.3 kV TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at 5.0 mA
– AA: 50–600%
– AGB: 100–600%
– AGR: 100–300%
– ABM: 200–400%
– ABL: 200–600%
– AY: 50–150%
– AB: 80–260%
– BC: 130–400%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
V
•
VDE 0884 Available with Option 1
D E
Dimensions in inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode 1
Cathode 2
3
4
4 Collector
3 Emitter
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
3°–9°
.008 (.20)
.012 (.30)
.300 (7.62) typ.
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
DESCRIPTION
The SFH615XXX features a large assortment of cur-
rent transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infra-
red emitting diode emitter, which is optically coupled
to a silicon planar phototransistor detector, and is
incorporated in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
DC Forward Current ........................................................................60 mA
Surge Forward Current (t
P
≤10 µs)
....................................................2.5 A
Total Power Dissipation ................................................................100 mW
Detector
Collector-Emitter Voltage....................................................................70 V
Emitter-Collector Voltage...................................................................7.0 V
Collector Current.............................................................................50 mA
Collector Current (t
P
≤1.0
ms)........................................................100 mA
Total Power Dissipation ................................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................................5300 V
RMS
Creepage ...................................................................................
≥7.0
mm
Clearance...................................................................................
≥7.0
mm
Insulation Thickness between Emitter and Detector..................
≥0.4
mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1...............................................
≥175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range .............................................–55 to +100
°
C
Junction Temperature ..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) ........................................... 260
°
C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
March 11, 2000-23
Table 2. Characteristics
(
T
A
=25
°
C)
Parameter
Emitter (IR GaAs)
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector (Si Phototransistor)
Capacitance
Thermal Resistance
Package
Collector-Emitter Saturation Voltage
Coupling Capacitance
V
CEsat
C
C
0.25(
≤
0.4)
0.4
V
pF
I
F
=10 mA,
I
C
=2.5 mA
—
C
CE
R
thJA
5.2
500
pF
K/W
V
CE
=5 V, f=1.0 MHz
—
V
F
I
R
C
0
R
thJA
1.25(
≤
1.65)
0.01(
≤
10)
13
750
V
µ
A
Symbol
Value
Unit
Condition
I
F
=60 mA
V
R
=6.0 V
V
R
=0 V, f=1.0 MHz
—
pF
K/W
Table 3. Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0 V)
and Collector-emitter Leakage Current
Parameter
I
C
/
I
F
(
I
F
=5.0 mA)
Collector-Emitter Leakage
Current,
I
CEO,
V
CEO
=10 V
AA
50–600
10(
≤
100)
AGB
100–600
10(
≤
100)
AGR
100–300
10(
≤
100)
ABM
200–400
10(
≤
100)
ABL
200–600
10(
≤
100)
AY
50–150
10(
≤
100)
AB
80–260
10(
≤
100)
BC
130–400
10(
≤
100)
Unit
%
nA
Switching Operation
(with saturation)
I
F
1 kΩ
V
CC
=5 V
Parameter
Turn-on Time
Turn-off Time
Symbol
t
on
t
off
Value
2.0
25
Unit
µ
s
µ
s
Condition
I
F
=5.0 mA
47
Ω
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH615AA/AGB/AGR/ABM/ABL/AY/AB/BC
2
March 11, 2000-23
Figure 1. Current Transfer Ratio
(typical) vs. Temperature
I
F
=10 mA,
V
CE
=0.5 V
Figure 4. Output Characteristics (typi-
cal). Collector Current vs.
Collector-emitter Voltage
T
A
=25
°
C
Figure 6. Diode Forward Voltage
(typical) vs. Forward Current
Figure 2. Transistor Capacitance
(typical) vs. Collector-emitter Voltage
T
A
=25
°
C
, f=1.0 MHz
20
pF
15
Figure 5. Permissible Pulse Handling
Capability. Forward Current vs. Pulse-
width
Pulse cycle D=parameter,
T
A
=25
°
C
Figure 7. Permissible Power Dissipation
vs. Ambient Temperature
C
10
5
C
CE
0
10
-2
10
-1
10
-0
10
1
V
Ve
10
2
Figure 3. Permissible Diode Forward
Current vs. Ambient Temperature
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH615AA/AGB/AGR/ABM/ABL/AY/AB/BC
3
March 11, 2000-23
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