5.3 kV
TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at
I
F
=10 mA
– SFH615A-1, 40–80%
– SFH615A-2, 63–125%
– SFH615A-3, 100–200%
– SFH615A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
•
Withstand Test Voltage, 5300 V
RMS
•
High Collector-Emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
•
V
VDE 0884 Available with Option 1
D E
SFH615A
Dimensions in inches (mm)
2
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode 1
Cathode 2
3
4
4 Collector
3 Emitter
.179 (4.55)
.190 (4.83)
.030 (.76)
.045 (1.14)
.031 (.79) typ.
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
4°
typ.
.018 (.46)
.022 (.56)
10°
.020 (.508 )
.035 (.89)
.050 (1.27)
0.100 (2.54)
3°–9°
.008 (.20)
.012 (.30)
.300 (7.62) typ.
.230 (5.84)
.250 (6.35)
.110 (2.79)
.130 (3.30)
DESCRIPTION
The SFH615A features a large variety of transfer ratio,
low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plas-
tic DIP-4 package.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
Specifications subject to change.
Maximum Ratings
Emitter
Reverse Voltage ...............................................................................6.0 V
DC Forward Current ...................................................................... 60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................2.5 A
Total Power Dissipation .............................................................. 100 mW
Detector
Collector-Emitter Voltage...................................................................70 V
Emitter-Collector Voltage..................................................................7.0 V
Collector Current ........................................................................... 50 mA
Collector Current (t
P
≤
1.0 ms) ...................................................... 100 mA
Total Power Dissipation .............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74, t=1.0 s ....................................................... 5300 V
RMS
Creepage ....................................................................................
≥
7.0 mm
Clearance....................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector .................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1................................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range ............................................–55 to +100
°
C
Junction Temperature..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) .......................................... 260
°
C
Document Number: 83671
Revision 17-August-01
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