RN49A6FS
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor Built-in Transistor)
RN49A6FS
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
•
•
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
0.48
-0.04
+0.02
Unit: mm
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
0.35 0.35
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
fS6
JEDEC
JEITA
1.EMIITTER1
2.BASE1
3 COLLECTOR2.
4.EMIITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
B
R1
R2
B
R1
R2
―
―
2-1F1D
TOSHIBA
E
E
Weight: 1 mg (typ.)
Q1 (R1: 47kΩ
,
R2: 47kΩ)
Q2 (R1: 4.7kΩ
, R2: 47kΩ)
Equivalent Circuit
(top view)
6
5
4
Marking
6
5
4
Type name
Q1
Q2
X8
1
2
3
1
2
3
1
2009-04-23
RN49A6FS
Absolute Maximum Ratings
(Ta = 25°C) (Q1)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
20
20
10
50
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q2)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−20
−20
−5
−50
Unit
V
V
V
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
(Note1)
T
j
T
stg
Rating
50
150
−55
to 150
Unit
mW
°C
°C
Note1:
Note:
Total rating
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
2009-04-23
RN49A6FS
Electrical Characteristics
(Ta = 25°C) (Q1)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
R1
R1/R2
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
10 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
―
―
Min
⎯
⎯
0.088
120
⎯
1.2
0.8
⎯
37.6
0.8
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
47
1.0
Max
100
500
0.133
⎯
0.15
3.6
1.5
⎯
56.4
1.2
V
V
V
pF
kΩ
―
Unit
nA
mA
Electrical Characteristics
(Ta =25°C) (Q2)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
C
ob
R1
R1/R2
Test Condition
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
⎯
Min
⎯
⎯
−0.08
120
⎯
−0.6
−0.4
⎯
3.76
0.08
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
4.7
0.1
Max
−100
−500
−0.121
⎯
−0.15
−1.2
−0.8
⎯
5.64
0.12
V
V
V
pF
kΩ
―
Unit
nA
mA
3
2009-04-23
RN49A6FS
Q1
IC - VI (ON)
100
10000
IC - VI (OFF)
(mA)
コレクタ電流
IC
COLLECTOR CURRENT
(mA)
IC
10
COLLECTOR CURRENT IC
コレクタ電流
IC (μA)
Ta = 100°C
(μA)
EMITTER COMMON
エミッタ接地
VCE =
= 5V
VCE
5V
1000
Ta = 100°C
25
-25
25
1
-25
100
EMITTER COMMON
エミッタ接地
VCE = 0.2V
= 0.2V
VCE
0.1
0.1
1
10
100
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT ON VOLTAGE
VI
VI(ON)
(V)
(V)
(ON)
入力オン電圧
INPUT
入力オフ電圧
VI (OFF) (V)
(V)
OFF VOLTAGE VI(OFF)
hFE - IC
1000
1000
VCE(sat) - IC
25
-25
100
COLLECTOR-EMITTER SATURATION
½ﾚ½ﾀ½½ﾐ½ﾀ間½和電圧
VCE(sat) (mV)
VOLTAGE VCE(sat) (mV)
Ta = 100°C
EMITTER COMMON
エミッタ接地
IC/IB
/
= 20
20
IC IB =
DC
直流電流増幅率 hFE
CURRENT GAIN
100
Ta = 100°C
エミッタ接地
EMITTER COMMON
VCE = 5V
= 5V
VCE
10
1
10
100
25
-25
10
1
10
100
COLLECTOR CURRENT IC (mA)
コレクタ電流 IC (mA)
COLLECTOR CURRENT IC
コレクタ電流
IC (mA)
(mA)
4
2009-04-23
RN49A6FS
Q2
IC - VI(ON)
-100
-10000
IC - VI(OFF)
(mA)
コレクタ電流 IC
(mA)
COLLECTOR CURRENT IC
-10
COLLECTOR CURRENT IC
コレクタ電流 IC
(μA)
Ta = 100°C
(μA)
-1000
Ta = 100°C
25
-25
25
-1
-25
-100
EMITTER COMMON
エミッタ接地
VCE
VCE = -0.2V
= -0.2V
-0.1
-0.1
EMITTER COMMON
エミッタ接地
VCE
VCE = -5V
= -5V
-10
-1
-10
INPUT ON VOLTAGE VI(ON) (V)
入力オン電圧
VI(ON) ( V)
-100
0
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
INPUT OFF VOLTAGE VI(OFF) (V)
入力オフ電圧
VI(OFF) ( V)
-1.4
hFE - IC
1000
-1000
VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
½ﾚ½ﾀ½½ﾐ½ﾀ間½和電圧 VCE(sat)
(mV)
VOLTAGE VCE(sat) (mV)
Ta = 100°C
EMITTER
エミッタ接地
COMMON
IC/IB = 20
IC / IB = 20
DC
直流電流増幅率 hFE
CURRENT GAIN hFE
25
-25
100
Ta = 100°C
-100
25
-25
-10
EMITTER COMMON
エミッタ接地
VCE = -5V
= -5V
VCE
10
-1
-10
-100
-1
COLLECTOR CURRENT IC
コレクタ電流
IC (mA)
(mA)
-10
COLLECTOR CURRENT IC
コレクタ電流
IC (mA)
-100
(mA)
5
2009-04-23
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