RN2901FE~RN2906FE
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901FE,RN2902FE,RN2903FE
RN2904FE,RN2905FE,RN2906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN1901FE~RN1906FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2901FE
B
R1
R2
RN2902FE
RN2903FE
RN2904FE
E
RN2905FE
RN2906FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
JEITA
TOSHIBA
―
―
2-2N1G
Weight:0.003 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
Symbol
RN2901FE~
RN2906FE
RN2901FE~
RN2904FE
RN2905FE,
RN2906FE
V
CBO
V
CEO
Rating
−50
−50
−10
V
EBO
−5
I
C
RN2901FE~
RN2906FE
P
C
(Note 1)
T
j
T
stg
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Characteristics
Collector-base voltage
Collector-emitter voltage
(top view)
6
5
4
Q1
Q2
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
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