RN2401~RN2406
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2401, RN2402, RN2403,
RN2404, RN2405, RN2406
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1401~1406
Unit: mm
Equivalent Circuit Bias Resistor Values
C
Type No.
B
R1
R2
RN2401
RN2402
RN2403
E
RN2404
RN2405
RN2406
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2401~2406
RN2401~2406
RN2401~2404
RN2405, 2406
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
200
150
−55
to 150
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight:12mg (typ.)
Unit
V
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-11-16
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