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MT18HTS51272PKIY-80EXX

产品描述Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244
产品类别存储    存储   
文件大小360KB,共16页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 选型对比 全文预览

MT18HTS51272PKIY-80EXX概述

Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244

MT18HTS51272PKIY-80EXX规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DIMM
包装说明DIMM,
针数244
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式DUAL BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码R-XDMA-N244
JESD-609代码e4
长度82 mm
内存密度38654705664 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度72
功能数量1
端口数量1
端子数量244
字数536870912 words
字数代码512000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512MX72
封装主体材料UNSPECIFIED
封装代码DIMM
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度3.8 mm
自我刷新YES
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子面层Gold (Au)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度30 mm
Base Number Matches1

文档预览

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2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
Features
DDR2 SDRAM Mini-RDIMM
MT18HTS25672PKY – 2GB
MT18HTS51272PKY – 4GB
Features
244-pin, mini registered dual in-line memory
module
Fast data transfer rates: PC2-5300, PC2-4200, or
PC2-3200
2GB (256 Meg x 72) or 4GB (512 Meg x 72)
Supports ECC error detection and correction
Dual-rank, TwinDie™ (2COB) DRAM devices
V
DD
= V
DDQ
= 1.8V
V
DDSPD
= 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent
operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst length (BL) 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence-detect (SPD) with EEPROM
Phase-lock loop (PLL) to reduce loading on system
clock
Gold edge contacts
Lead-free
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Data Rate (MT/s)
CL = 6
800
800
CL = 5
800
667
667
CL = 4
533
533
553
553
400
CL = 3
400
400
400
400
400
t
RCD
t
RP
t
RC
Figure 1: 244-Pin Mini-RDIMM (MO-244 R/C X)
Module height: 30mm (1.18in)
Options
Parity
Operating temperature
Commercial (0°C
T
A
70°C)
Industrial (–40°C
T
A
85°C)
1
Package
244-pin DIMM (lead-free)
Frequency/CL
2
2.5ns @ CL = 5 (DDR2-800)
3.0ns @ CL = 5 (DDR2-667)
Notes:
Marking
P
None
I
Y
-80E
-667
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
(ns)
12.5
15
15
15
15
(ns)
12.5
15
15
15
15
(ns)
55
55
55
55
55
PDF: 09005aef82218d23
hts18c256_512x72pky.pdf - Rev. C 3/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2006 Micron Technology, Inc. All rights reserved.

MT18HTS51272PKIY-80EXX相似产品对比

MT18HTS51272PKIY-80EXX MT18HTS51272PKIY-667XX MT18HTS51272PKY-80EXX MT18HTS25672PKIY-80EXX MT18HTS25672PKIY-667XX MT18HTS25672PKY-667E1 MT18HTS51272PKY-667XX MT18HTS25672PKY-667XX MT18HTS25672PKY-80EXX MT18HTS51272PKY-667A1
描述 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, MO-244, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, MO-244, DIMM-244 DRAM, 512MX72, 0.45ns, CMOS, PDMA244
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, DIMM, LEAD FREE, MO-244, DIMM-244 LEAD FREE, MO-244, DIMM-244 DIMM, DIMM244,24
Reach Compliance Code compliant compliant compliant compliant compliant unknown compliant compliant compliant unknown
JESD-30 代码 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-PDMA-N244
JESD-609代码 e4 e4 e4 e4 e4 e4 e4 e4 e4 e3
内存密度 38654705664 bit 38654705664 bit 38654705664 bit 19327352832 bit 19327352832 bit 19327352832 bit 38654705664 bit 19327352832 bit 19327352832 bit 38654705664 bit
内存宽度 72 72 72 72 72 72 72 72 72 72
端子数量 244 244 244 244 244 244 244 244 244 244
字数 536870912 words 536870912 words 536870912 words 268435456 words 268435456 words 268435456 words 536870912 words 268435456 words 268435456 words 536870912 words
字数代码 512000000 512000000 512000000 256000000 256000000 256000000 512000000 256000000 256000000 512000000
最高工作温度 85 °C 85 °C 70 °C 85 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 512MX72 512MX72 512MX72 256MX72 256MX72 256MX72 512MX72 256MX72 256MX72 512MX72
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED PLASTIC/EPOXY
封装代码 DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度) 260 260 260 260 260 260 260 260 260 225
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 NO NO NO NO NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) MATTE TIN
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 30 30 NOT SPECIFIED
零件包装代码 DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM -
针数 244 244 244 244 244 244 244 244 244 -
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 -
访问模式 DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST -
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH -
长度 82 mm 82 mm 82 mm 82 mm 82 mm 82 mm 82 mm 82 mm 82 mm -
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE -
功能数量 1 1 1 1 1 1 1 1 1 -
端口数量 1 1 1 1 1 1 1 1 1 -
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
座面最大高度 3.8 mm 3.8 mm 3.8 mm 3.8 mm 3.8 mm 3.8 mm 3.8 mm 3.8 mm 3.8 mm -
自我刷新 YES YES YES YES YES YES YES YES YES -
最大供电电压 (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V -
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V -
宽度 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm 30 mm -
厂商名称 - - - Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
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