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HYMP112F72CP8D5-S6: 产品描述DDR DRAM, 128MX8, CMOS, ROHS COMPLIANT, DIMM-240; 产品类别存储存储; 文件大小3MB，共32页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/; 标准

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HYMP112F72CP8D5-S6概述

DDR DRAM, 128MX8, CMOS, ROHS COMPLIANT, DIMM-240

HYMP112F72CP8D5-S6规格参数

参数名称	属性值
是否Rohs认证	符合
零件包装代码	DIMM
包装说明	DIMM, DIMM240,40
针数	240
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
其他特性	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
最大时钟频率 (fCLK)	400 MHz
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N240
长度	133.35 mm
内存密度	1073741824 bit
内存集成电路类型	DDR DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	240
字数	134217728 words
字数代码	128000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度
组织	128MX8
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM240,40
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	260
电源	1.5,1.8 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	30.35 mm
自我刷新	YES
最大供电电压 (Vsup)	1.9 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	NO
技术	CMOS
温度等级	OTHER
端子形式	NO LEAD
端子节距	1 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	20
宽度	8.2 mm
Base Number Matches	1

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240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver.

This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow

host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

isolates the DDR2 SDRAMs from the channel. This single component located in the front side center of

each DIMM, acts as a repeater and buffer for all signals and commands which are exchanged between the

host controller and the DDR2 SDRAMs including data in and output. The AMB communicates with the host

controller and adjacent DIMMs on a system board using an industry standard Differential Point to Point

Link Interface at 1.5V power.

The AMB also allows buffering of memory traffic to support large memory capacities. All memory control

for the DDR2 SDRAM devices resides in the host, including memory request initiation, timing, refresh,

scrubbing, sparing, configuration access and power management. The AMB interface is responsible for

handling channel and memory requests to and from the local FBDIMM and for forwarding request to other

FBDIMMs on the memory channel.

FEATURES

•

240 pin Fully Buffered ECC Dual-In-Line DDR2 SDRAM Module

JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply

All inputs and outputs are compatible with SSTL_1.8 interface

Built with 1Gb DDR2 SDRAMs in 60ball FBGA

Host interface and AMB component industry standard compliant

MBIST, IBIST test functions

8 Bank architecture

OCD (Off-Chip Driver Impedance Adjustment)

ODT (On-Die Termination)

Fully differential clock operations (CK & CK)

Programmable Burst Length 4 / 8 with both sequential and interleave mode

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

Serial presence detect with EEPROM

133.35 x 30.35 mm form factor

RoHS compliant

Full DIMM Heat Spreader

This document is a general product description and is subject to change without notice. Hynix Electronics does not

assume any responsibility for use of circuits described. No patent licenses are implied.

Rev 1.01 /Sep. 2008

HYMP112F72CP8D5-S6相似产品对比

	HYMP112F72CP8D5-S6	HYMP151F72CP4D5-S6	HYMP112F72CP8D3-S6	HYMP125F72CP8D3-Y5	HYMP125F72CP8D3-S6	HYMP125F72CP8D5-Y5	HYMP112F72CP8N3-Y5	HYMP112F72CP8D3-C4
描述	DDR DRAM, 128MX8, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 512MX8, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 128MX8, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 256MX72, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 256MX8, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 256MX8, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 128MX72, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 128MX72, CMOS, ROHS COMPLIANT, DIMM-240
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40
针数	240	240	240	240	240	240	240	240
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
其他特性	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	400 MHz	400 MHz	400 MHz	333 MHz	400 MHz	333 MHz	333 MHz	266 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N240	R-PBGA-B84	R-XDMA-N240	R-XDMA-N240	R-XDMA-N240	R-PBGA-B84	R-XDMA-N240	R-XDMA-N240
内存密度	1073741824 bit	4294967296 bit	1073741824 bit	19327352832 bit	2147483648 bit	2147483648 bit	9663676416 bit	9663676416 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	8	8	8	72	8	8	72	72
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	240	240	240	240	240	240	240	240
字数	134217728 words	536870912 words	134217728 words	268435456 words	268435456 words	268435456 words	134217728 words	134217728 words
字数代码	128000000	512000000	128000000	256000000	256000000	256000000	128000000	128000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
组织	128MX8	512MX8	128MX8	256MX72	256MX8	256MX8	128MX72	128MX72
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	GRID ARRAY, THIN PROFILE, FINE PITCH	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	GRID ARRAY, THIN PROFILE, FINE PITCH	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260
电源	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V	1.5,1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	NO	YES	NO	NO	NO	YES	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
端子位置	DUAL	BOTTOM	DUAL	DUAL	DUAL	BOTTOM	DUAL	DUAL
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20
Base Number Matches	1	1	1	1	1	1	1	1
长度	133.35 mm	133.35 mm	133.35 mm	-	133.35 mm	133.35 mm	-	-
座面最大高度	30.35 mm	30.35 mm	30.35 mm	-	30.35 mm	30.35 mm	-	-
宽度	8.2 mm	8.2 mm	8.2 mm	-	8.2 mm	8.2 mm	-	-

HYMP112F72CP8D5-S6

HYMP112F72CP8D5-S6概述

HYMP112F72CP8D5-S6规格参数

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