TN6728A / NZT6728
TN6728A
NZT6728
C
E
E
C
C
TO-226
B
E
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 78.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60
60
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TN6728A
1.0
8.0
50
125
Max
*NZT6728
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
1997 Fairchild Semiconductor Corporation
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 1.0 mA, I
C
= 0
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
60
60
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, I
B
= 25 mA
I
C
= 250 mA, V
CE
= 1.0 V
80
50
20
250
0.5
0.35
1.2
V
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
Small-Signal Current Gain
Collector-Base Capacitance
V
CE
= 5.0 V, I
C
= 200 mA,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
2.5
25
30
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
3
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
400
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
0.5
0.4
0.3
0.2
125 °C
V
CE
= 5V
300
125 °C
β
= 10
- 40 °C
25 °C
200
25 °C
100
- 40 °C
0.1
0
0.01
0
0.01
I
C
0.1
- COLLECTOR CURRENT (A)
1
0.1
I
C
- COLLE CTOR CURRENT (A)
1
1.5
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
0.8
- 40 °C
25 °C
0.6
25 °C
0.6
125 °C
0.4
125 °C
V
CE
= 5V
0.4
1
I
C
10
100
- COLLECTOR CURRENT ( mA)
1000
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
obo
- COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 40V
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
30
10
1
20
0.1
10
25
50
75
100
125
T
A
- AM BIENT TE MPERATURE (
°
C)
150
0
0
4
8
12
16
20
24
28
V
CB
- COLLECTOR-BASE VOLTAGE (V)
h
FE
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
250
V
CE
= 10V
200
150
100
50
0
Safe Operating Area TO-226 / SOT-223
10
I
C
- COLLECTOR CURRENT (A)
10
µ
S
*
1
DC
100
T
CO
L LE
CT
OR
µ
S
*
1.0
ms
*
DC
T
0.1
*PULSED
OPERATION
T
A
= 25 °C
AM
BIE
NT
=2
5°
LE
AD
=2
5
°C
C
LIMIT DETERMINED
BY BV
CEO
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
0.01
1
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
100
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
TO-226
SOT-223
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
3
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
S e Fig 2
e
.0 for va rious
HTB:B
10000
Reeli g Styles
n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V:
QA REV:
D/C1:
D9842
B2
Labe l
5 Reels per
Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019
QTY: 2000
Cus tom ized
Labe l
F63TNR
Labe l
Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
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(F63TNR)3
Labe l
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
S e Fig 3
e
.0 for 2 Ammo
Pack Option
s
TO-226AE TNR/AMMO PACKING INF R
O MATION
Packing
Reel
Style
A
E
Qua
ntity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
Am m o
M
P
FSCINT
Labe l
327m m x 158m m x 135mm
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Uni t wei gh t
Reel weig ht wi th c om po nents
Amm o weig ht wi th c omp on en ts
= 0.300g m
= 0.868 k g
= 0.880 k g
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
333m m x 231m m x 183mm
Int er med iate B ox
BULK OPTION
S e Bulk P
e
acking
Informat ion tabl
e
Anti -stati c
FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP
DIMENSION
NO L EAD CLIP
NO L EAD CLIP
NO L EADCLIP
Bub ble Sheets
EOL CO
DE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5
OPTION STD
QUANTITY
1.0 K / BOX
1.0 K / BOX
1.5 K / BOX
1,500 un its per
EO70 box for
s td o pti on
114m m x 102m m x 51mm
EO70 Im mediate B ox
TO-226 STANDARD
STRAIGHT
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
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