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TN6728A / NZT6728
TN6728A
NZT6728
C
E
E
C
C
TO-226
B
E
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 78.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60
60
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TN6728A
1.0
8.0
50
125
Max
*NZT6728
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
1997 Fairchild Semiconductor Corporation
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 1.0 mA, I
C
= 0
V
CB
= 40 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
60
60
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, I
B
= 25 mA
I
C
= 250 mA, V
CE
= 1.0 V
80
50
20
250
0.5
0.35
1.2
V
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
Small-Signal Current Gain
Collector-Base Capacitance
V
CE
= 5.0 V, I
C
= 200 mA,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
2.5
25
30
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
3
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
400
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
0.5
0.4
0.3
0.2
125 °C
V
CE
= 5V
300
125 °C
β
= 10
- 40 °C
25 °C
200
25 °C
100
- 40 °C
0.1
0
0.01
0
0.01
I
C
0.1
- COLLECTOR CURRENT (A)
1
0.1
I
C
- COLLE CTOR CURRENT (A)
1
1.5
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
0.8
- 40 °C
25 °C
0.6
25 °C
0.6
125 °C
0.4
125 °C
V
CE
= 5V
0.4
1
I
C
10
100
- COLLECTOR CURRENT ( mA)
1000
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
obo
- COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 40V
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
30
10
1
20
0.1
10
25
50
75
100
125
T
A
- AM BIENT TE MPERATURE (
°
C)
150
0
0
4
8
12
16
20
24
28
V
CB
- COLLECTOR-BASE VOLTAGE (V)
h
FE
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
250
V
CE
= 10V
200
150
100
50
0
Safe Operating Area TO-226 / SOT-223
10
I
C
- COLLECTOR CURRENT (A)
10
µ
S
*
1
DC
100
T
CO
L LE
CT
OR
µ
S
*
1.0
ms
*
DC
T
0.1
*PULSED
OPERATION
T
A
= 25 °C
AM
BIE
NT
=2
5°
LE
AD
=2
5
°C
C
LIMIT DETERMINED
BY BV
CEO
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
0.01
1
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
100
TN6728A / NZT6728
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
TO-226
SOT-223
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
3
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