Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIE |
| 包装说明 | UNCASED CHIP, S-XUUC-N3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | LOW THRESHOLD |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V |
| 最大漏源导通电阻 | 6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 35 pF |
| JESD-30 代码 | S-XUUC-N3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | SQUARE |
| 封装形式 | UNCASED CHIP |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| TN0620ND | TN0620N2 | TN0624N5 | TN0624ND | |
|---|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Small Signal Field-Effect Transistor, 0.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | Power Field-Effect Transistor, 1.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | UNCASED CHIP, S-XUUC-N3 | CYLINDRICAL, O-MBCY-W3 | FLANGE MOUNT, R-PSFM-T3 | UNCASED CHIP, S-XUUC-N3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD | LOW THRESHOLD |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 200 V | 200 V | 240 V | 240 V |
| 最大漏源导通电阻 | 6 Ω | 6 Ω | 6 Ω | 6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 35 pF | 35 pF | 35 pF | 35 pF |
| JESD-30 代码 | S-XUUC-N3 | O-MBCY-W3 | R-PSFM-T3 | S-XUUC-N3 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | METAL | PLASTIC/EPOXY | UNSPECIFIED |
| 封装形状 | SQUARE | ROUND | RECTANGULAR | SQUARE |
| 封装形式 | UNCASED CHIP | CYLINDRICAL | FLANGE MOUNT | UNCASED CHIP |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO | YES |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD |
| 端子形式 | NO LEAD | WIRE | THROUGH-HOLE | NO LEAD |
| 端子位置 | UPPER | BOTTOM | SINGLE | UPPER |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 零件包装代码 | DIE | - | SFM | DIE |
| 针数 | 3 | - | 3 | 3 |
| 厂商名称 | - | Supertex | Supertex | Supertex |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
