Datasheet> 器件分类 > 分立半导体> 二极管> MBRT120200R

MBRT120200R: 产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 200V V(RRM), Silicon,; 产品类别分立半导体二极管; 文件大小903KB，共2页; 制造商Daco Semiconductor Co Ltd

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MBRT120200R概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 200V V(RRM), Silicon,

MBRT120200R规格参数

参数名称	属性值
包装说明	R-XUFM-X3
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	GENERAL PURPOSE
外壳连接	ISOLATED
配置	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.92 V
JESD-30 代码	R-XUFM-X3
最大非重复峰值正向电流	800 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	60 A
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
最大重复峰值反向电压	200 V
最大反向电流	1000 µA
表面贴装	NO
技术	SCHOTTKY
端子形式	UNSPECIFIED
端子位置	UPPER
Base Number Matches	1

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DACO SEMICONDUCTOR CO.,LTD

Features

High surge Capability

Types Up to 200V V

RRM

Isolation Type Package

Electrically Isolation base plate

MBRT120150(R)

THRU

MBRT120200(R)

SCHOTTKY DIODE MODULE TYPES 120A

120 Amp Rectifier

150~200 Volts

THREE TOWER

Maximum Ratings

Operating Temperature: -55℃ to+150

℃

Storage Temperature: -55℃ to+150

℃

Part Number

MBRT120150(R)

MBRT120200(R)

Maximum

Recurrent

Peak Reverse

Voltage

150V

200V

Maximum

RMS Voltage

106V

141V

Maximum DC

Blocking

Voltage

150V

200V

LUG

Teminal

Anode 1

NAME PLATE

LUG

Teminal Teminal

Catode 2 Anode 3

LUG

Teminal

Cathode 1 Anode 2

LUG

Teminal

Cathode 3

Commom Center

Common Cathode

N-Type

Common Center

R=Common Anode

P-Type

Inches

Millimeters

Max

NOM

1.585

.800

.132

REF

3.65

.73

Min

80.01

39.75

17.78

3.02

33.72

90.17

-----

Max

NOM

40.26

20.32

3.35

REF

92.71

18.30

Electrcal Characteristics @ 25℃ Unless Otherwise Specified

Average Forward

Current

(Per pkg)

Peak Forward Surge

(Per leg)

Current

Maximum

(Per leg)

Instantaneous

Forward Voltage

NOTE (1)

Maximum

Instantaneous

Reverse Current At

Rated DC Blocking

(Per leg)

Voltage

Maximum Thermal

Resistance Junction

To Case

(Per leg)

F(AV)

FSM

150V

200V

DIM

Min

3.150

1.565

.700

.119

1.327

3.55

-----

120A

800A

0.88V

0.92V

=125

8.3ms,half sine

FM=60A;T

=25

= 25

=100

=150

1 mA

10 mA

30 mA

0.80

R jc

.472

.275

2.38

1/4-20 UNC FULL

-----

.511

-----

.295

6.99

2.46

60.5

7.49

62.5

NOTE :

(1)

Pulse Test: Pulse Width 300

μsec

,Duty<2%

WWW.dacosemi.com.tw

-1-

MBRT120200R相似产品对比

	MBRT120200R	MBRT120200	MBRT120150R	MBRT120150
描述	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 200V V(RRM), Silicon,	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 200V V(RRM), Silicon,	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 150V V(RRM), Silicon,	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 150V V(RRM), Silicon,
包装说明	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3
Reach Compliance Code	unknown	unknown	unknown	unknown
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.92 V	0.92 V	0.88 V	0.88 V
JESD-30 代码	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3	R-XUFM-X3
最大非重复峰值正向电流	800 A	800 A	800 A	800 A
元件数量	2	2	2	2
相数	1	1	1	1
端子数量	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	60 A	60 A	60 A	60 A
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
最大重复峰值反向电压	200 V	200 V	150 V	150 V
最大反向电流	1000 µA	1000 µA	1000 µA	1000 µA
表面贴装	NO	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子形式	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
端子位置	UPPER	UPPER	UPPER	UPPER

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