Power F-MOS FETs
2SK2374
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
5˚
26.5±0.5
5˚
23.4
22.0±0.5
2.0 1.2
5˚
18.6±0.5
5˚
5˚
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
900
±30
±5
±10
45
100
3
150
−55
to +150
Unit
V
V
5.45±0.3
3.3±0.3
0.7±0.1
5.45±0.3
5.5±0.3
5˚
1
2
3
A
A
mJ
W
°C
°C
1: Gate
2: Drain
3: Source
TOP-3E Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25°C
Ta = 25°C
L = 3.6mH, I
L
= 5A, 1 pulse
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 200V, I
D
= 3A
V
GS
= 10V, R
L
= 66.6Ω
Conditions
V
DS
= 720V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
1400
V
DS
= 20V, V
GS
= 0, f = 1MHz
140
60
30
60
60
170
1.25
41.67
1.5
900
2
2
3.5
−1.6
5
2.8
min
typ
max
100
±1
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
2.0
1
Power F-MOS FETs
Area of safe operation (ASO)
100
120
2SK2374
P
D
Ta
Allowable power dissipation P
D
(W)
(1) T
C
=Ta
(2) Without heat sink
(P
D
=3W)
100
IAS
L-load
T
C
=25˚C
Non repetitive pulse
T
C
=25˚C
I
DP
I
D
1ms
1
10ms
100ms
DC
0.1
t=100µs
Drain current I
D
(A)
10
80
(1)
60
Avalanche current IAS (A)
100
30
10
3
45mJ
40
1
20
(2)
0.3
0.01
1
3
10
30
100
300
1000
0
0
20
40
60
80 100 120 140 160
0.1
0.1
0.3
1
3
10
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
L-load (mH)
I
D
V
GS
10
V
DS
=25V
T
C
=25˚C
6
V
th
T
C
50
V
DS
=25V
I
D
=1mA
5
V
DS
V
GS
T
C
=25˚C
8
Drain to source voltage V
DS
(V)
Gate threshold voltage V
th
(V)
40
I
D
=10A
30
Drain current I
D
(A)
4
6
3
4
20
2
5A
10
2.5A
0
2
1
0
0
1
2
3
4
5
6
7
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Gate to source voltage V
GS
(V)
Case temperature T
C
(˚C)
Gate to source voltage V
GS
(V)
R
DS(on)
I
D
Drain to source ON-resistance R
DS(on)
(
Ω
)
6
T
C
=150˚C
5
6
| Y
fs
|
I
D
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10000
C
iss
, C
oss
, C
rss
V
DS
V
DS
=25V
T
C
=25˚C
f=1MHz
T
C
=25˚C
Forward transfer admittance |Y
fs
| (S)
V
GS
=10V
5
1000
C
iss
4
100˚C
3
25˚C
4
3
100
C
oss
C
rss
10
2
2
0˚C
1
1
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
1
0
40
80
120
160
200
Drain current I
D
(A)
Drain current I
D
(A)
Drain to source voltage V
DS
(V)
2
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