NTP75N06, NTB75N06,
NTBV75N06
75 Amps, 60 Volts, N−Channel
TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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Power MOSFET
•
These Devices are Pb−Free and are RoHS Compliant
•
NTBV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Typical Applications
75 AMPERES, 60 VOLTS
R
DS(on)
= 9.5 mW
N−Channel
D
•
•
•
•
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
−
Continuous
−
Non−Repetitive (t
p
v10
ms)
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Single Pulse (t
p
v10
ms)
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 75 A, V
DS
= 60 Vdc)
Thermal Resistance
−
Junction−to−Case
−
Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
Value
60
60
"20
"30
75
50
225
214
1.4
2.4
−55
to
+175
844
Adc
Apk
W
W/°C
W
°C
mJ
1
2
3
4
MARKING
DIAGRAMS
Unit
Vdc
Vdc
Vdc
TO−220
CASE 221A
STYLE 5
1
1
Gate
75N06
AYWW
4
4
Drain
2
I
DM
P
D
3
2
Drain
4
Drain
3
Source
T
J
, T
stg
E
AS
D
2
PAK
CASE 418B
STYLE 2
75N06
AYWW
R
qJC
R
qJA
T
L
0.7
62.5
260
°C/W
75N06
A
Y
WW
2
1
3
Drain
Gate
Source
= Device Code
= Assembly Location
= Year
= Work Week
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
December, 2012
−
Rev. 3
1
Publication Order Number:
NTP75N06/D
NTP75N06, NTB75N06, NTBV75N06
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc)
Static Drain−to−Source On−Voltage (Note 1)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 1) (V
DS
= 15 Vdc, I
D
= 37.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 75 Adc,
V
GS
= 10 Vdc) (Note 1)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
Reverse Recovery Time
(I
S
= 75 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
(I
S
= 75 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
−
1.0
0.9
77
49
28
0.16
1.1
−
−
−
−
−
mC
Vdc
ns
(V
DD
= 30 Vdc, I
D
= 75 Adc,
V
GS
= 10 Vdc, R
G
= 9.1
W)
(Note 1)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
16
112
90
100
92
14
44
25
155
125
140
130
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
3220
1020
234
4510
1430
330
pF
V
GS(th)
Vdc
2.0
−
−
−
−
−
2.8
8.0
8.2
0.72
0.63
40.2
4.0
−
9.5
Vdc
0.86
−
−
mhos
mV/°C
mW
V
(BR)DSS
Vdc
60
−
−
−
−
71
73
−
−
−
−
−
10
100
±100
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
FS
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2
NTP75N06, NTB75N06, NTBV75N06
160
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
140
120
100
80
60
40
20
0
0
1
2
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 9 V
V
GS
= 5.5 V
V
GS
= 10 V
V
GS
= 6.5 V
V
GS
= 6 V
160
140
120
100
80
60
40
20
0
2.5
T
J
= 25°C
T
J
= 100°C
3
3.5
4
4.5
T
J
=
−55°C
5
5.5
6
6.5
7
V
DS
w
10 V
V
GS
= 5 V
V
GS
= 4.5 V
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
0.013
0.011
0.009
0.007
0.005
0.003
V
GS
= 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
0.013
0.011
T
J
= 100°C
V
GS
= 15 V
T
J
= 100°C
T
J
= 25°C
0.009
0.007
T
J
= 25°C
T
J
=
−55°C
0.005
0.003
T
J
=
−55°C
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
10
0
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
= 37.5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
I
DSS
, LEAKAGE (nA)
1000
T
J
= 125°C
100
T
J
= 100°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
NTP75N06, NTB75N06, NTBV75N06
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10000
V
DS
= 0 V
C, CAPACITANCE (pF)
8000
6000
C
rss
4000
2000
0
10
C
iss
C
oss
C
rss
5
V
GS
0
V
DS
12
10
8
Q
1
6
4
2
0
I
D
= 75 A
T
J
= 25°C
0
10
20
30
40
50
60
70
80
90
100
Q
2
Q
T
V
GS
V
GS
= 0 V
T
J
= 25°C
C
iss
5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
80
70
60
50
40
30
20
10
0
0.6
V
GS
= 0 V
T
J
= 25°C
100
t, TIME (ns)
t
f
t
r
t
d(off)
10
t
d(on)
V
DS
= 30 V
I
D
= 75 A
V
GS
= 5 V
1
10
R
G
, GATE RESISTANCE (W)
100
1
0.64 0.68 0.72 0.76 0.8
0.84 0.86 0.92 0.96
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
1000
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
800
600
400
200
0
25
Figure 10. Diode Forward Voltage vs. Current
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
ms
I
D
= 75 A
100
100
ms
1 ms
10
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
10 ms
dc
1
0.1
100
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
NTP75N06, NTB75N06, NTBV75N06
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
t, TIME (ms)
0.1
t
1
P
(pk)
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
−
T
C
= P
(pk)
R
qJC
(t)
1.0
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTP75N06G
NTB75N06G
NTB75N06T4G
NTBV75N06T4G*
Package
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units/Rail
50 Units/Rail
800 Tape & Reel
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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