TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V
(BR)DSS
Min (V)
200
r
DS(on)
Max (W)
11
V
GS(th)
(V)
0.8 to 3.0
I
D
(A)
0.12
Features
D
D
D
D
D
Low On-Resistance: 9.5
W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Benefits
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
Applications
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
TN2010T (R1)*
*Marking Code for TO-236
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
T
A
=
25_C
T
A
=
70_C
T
A
=
25_C
T
A
=
70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
200
"20
0.12
0.08
0.34
0.35
0.22
357
–55 to 150
Unit
V
A
W
_C/W
_C
Siliconix
S-52426—Rev. C, 14-Apr-97
1
TN2010T
Specifications
a
Limits
Parameter
Static
Drain-SourceBreakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
c
Drain-Source On Resistance
Drain Source On-Resistance
c
Forward Transconductance
c
Diode Forward Voltage
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 100
mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
T
J
= –55_C
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 0.1 A
V
GS
= 4.5 V, I
D
= 0.05 mA
V
DS
= 10 V, I
D
= 0.1 A
I
S
= 0.085 A, V
GS
= 0 V
0.3
9.5
10
300
0.8
11
15
200
0.8
220
1.6
V
3.0
"100
1
10
nA
mA
mA
W
mS
V
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 100 V, V
GS
= 10 V, I
D
]
0.1 A
1750
275
300
35
6
2
pF
pC
Switching
d
Turn-On
Turn On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
= 60 V, R
L
= 600
W
I
D
^
0 1
A V
GEN
= 10 V
0.1
A,
R
G
= 6
W
4
16
ns
16
45
2
Siliconix
S-52426—Rev. C, 14-Apr-97
TN2010T
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
0.5
4V
V
GS
= 10 V
0.4
I
D
– Drain Current (A)
3.4 V
3.2 V
0.3
3.0 V
0.2
2.8 V
2.6 V
0.1
2.4 V
2.2 V
2.0 V
0
2
4
6
8
10
I
D
– Drain Current (A)
T
C
= –55_C
0.4
25_C
0.3
125_C
0.2
0.5
Transfer Characteristics
0.1
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
16
100
Capacitance
r
DS(on)
– On-Resistance (
W)
80
V
GS
= 4.5 V
V
GS
= 10 V
8
C – Capacitance (pF)
12
60
C
iss
40
4
20
C
oss
C
rss
0
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
I
D
– Drain Current (A)
0
0
5
10
15
20
25
V
DS
– Drain-to-Source Voltage (V)
20
V
GS
– Gate-to-Source Voltage (V)
Gate Charge
2.5
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
W)
(Normalized)
16
V
DS
= 100 V
I
D
= 100 mA
2.0
V
GS
= 10 V
I
D
= 100 mA
1.5
V
GS
= 4.5 V
I
D
= 50 mA
1.0
12
8
4
0
0
500 1000 1500 2000 2500 3000 3500 4000
Q
g
– Total Gate Charge (pC)
0.5
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (
_
C)
Siliconix
S-52426—Rev. C, 14-Apr-97
3
TN2010T
Typical Characteristics (25_C Unless Otherwise Noted)
10.000
Source-Drain Diode Forward Voltage
12.0
11.5
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
1.000
T
J
= 150_C
0.100
r
DS(on)
– On-Resistance (
W
)
11.0
10.5
r
DS
@ I
D
= 100 m A
10.0
r
DS
@ I
D
= 50 m A
9.5
9
0.010
T
J
= 25_C
0.001
0.30
0.45
0.60
0.75
0.90
1.05
1.20
3
5
7
9
11
13
15
17
19
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.3
0.2
0.1
V
GS(th)
Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–75 –50 –25
Threshold Voltage
I
D
= 250
mA
0
25
50
75
100 125 150
T
J
– Temperature (_C)
4
Siliconix
S-52426—Rev. C, 14-Apr-97
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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