NTF5P03T3
Preferred Device
Power MOSFET
5.2 Amps, 30 Volts
P–Channel SOT–223
Features
•
•
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SOT–223 Surface Mount Package
Avalanche Energy Specified
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5.2 AMPERES
30 VOLTS
R
DS(on)
= 100 mW
P–Channel
D
Applications
DC–DC Converters
Power Management
Motor Controls
Inductive Loads
Replaces MMFT5P03HD
G
S
MARKING
DIAGRAM
4
1
2
3
SOT–223
CASE 318E
STYLE 3
AWW
5P03
A
WW
5P03
= Assembly Location
= Work Week
= Device Code
PIN ASSIGNMENT
4
Drain
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
Device
NTF5P03T3
Package
SOT–223
Shipping
1000 Tape & Reel
©
Semiconductor Components Industries, LLC, 2002
1
May, 2002 – Rev. 1
Publication Order Number:
NTF5P03T3/D
NTF5P03T3
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
GS
= 1.0 MW)
Gate–to–Source Voltage – Continuous
1″ SQ.
FR–4 or G–10 PCB
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current – Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T
A
= 25°C
Linear Derating Factor
Drain Current – Continuous @ T
A
= 25°C
Continuous @ T
A
= 70°C
Pulsed Drain Current (Note 1)
Symbol
V
DSS
V
DGR
V
GS
R
THJA
P
D
I
D
I
D
I
DM
R
THJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
250
Max
–30
–30
±
20
40
3.13
25
–5.2
–4.1
–26
80
1.56
12.5
–3.7
–2.9
–19
– 55 to 150
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
10 seconds
Minimum
FR–4 or G–10 PCB
10 seconds
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting T
J
= 25°C
(V
DD
= –30 Vdc, V
GS
= –10 Vdc, Peak I
L
= –12 Apk, L = 3.5 mH, R
G
= 25
W)
1. Repetitive rating; pulse width limited by maximum junction temperature.
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2
NTF5P03T3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk
≥
2.0) (Notes 2 and 4)
(V
GS
= 0 Vdc, I
D
= –0.25
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= –24 Vdc, V
GS
= 0 Vdc)
(V
DS
= –24 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate–Body Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
V
(BR)DSS
–30
–
I
DSS
–
–
I
GSS
–
–
–
–
–1.0
–25
±
100
nAdc
–
–28
–
–
Vdc
mV/°C
mAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage (Cpk
≥
2.0) (Notes 2 and 4)
(V
DS
= V
GS
, I
D
= –0.25
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Cpk
≥
2.0) (Notes 2 and 4)
(V
GS
= –10 Vdc, I
D
= –5.2 Adc)
(V
GS
= –4.5 Vdc, I
D
= –2.6Adc)
Forward Transconductance (Note 2)
(V
DS
= –15 Vdc, I
D
= –2.0 Adc)
V
GS(th)
–1.0
–
R
DS(on)
–
g
fs
2.0
76
107
3.9
100
150
–
Mhos
–1.75
3.5
–3.0
–
Vdc
mV/°C
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= –25 Vdc, V
GS
= 0 V,
f = 1 0 MH )
1.0 MHz)
C
iss
C
oss
C
rss
–
–
–
500
153
58
950
440
140
pF
SWITCHING CHARACTERISTICS
(Note 3)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(V
DS
= –24 Vdc, I
D
= –4.0 Adc,
V
GS
= –10 Vdc) (Note 2)
10 Vd ) (N t
(V
DD
= –15 Vdc, I
D
= –2.0 Adc,
V
GS
= –10 Vdc,
10 Vd
R
G
= 6.0
W)
(Note 2)
(V
DD
= –15 Vdc, I
D
= –4.0 Adc,
V
GS
= –10 Vdc,
10 Vd
R
G
= 6.0
W)
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q3
–
–
–
–
–
–
–
–
–
–
–
–
10
33
38
20
16
45
23
24
15
1.6
3.5
2.6
24
48
94
92
38
110
60
80
38
–
–
–
nC
ns
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I
S
= –4.0 Adc, V
GS
= 0 Vdc)
(I
S
= –4.0 Adc, V
GS
= 0 Vdc,
T
J
= 125°C) (Note 2)
(I
S
= –4.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ ) (Note 2)
A/ms) (N t
V
SD
–
–
t
rr
t
a
t
b
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
Max limit
*
Typ
Cpk
+
3 SIGMA
Q
RR
–
–
–
–
–1.1
–0.89
34
20
14
0.036
–1.5
–
–
–
–
–
mC
ns
Vdc
Reverse Recovery Time
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3
NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
5
–I
D,
DRAIN CURRENT (AMPS)
10
–I
D,
DRAIN CURRENT (AMPS)
V
GS
= –4.3 V
V
GS
= –4.5 V
V
GS
= –6.0 V
V
GS
= –8.0 V
V
GS
= –4.1 V
V
GS
= –3.9 V
V
GS
= –3.7 V
V
GS
= –3.5 V
V
GS
= –3.3 V
1
0
0
V
GS
= –3.1 V
0.3
0.6
0.9
1.2
V
GS
= –2.7 V
1.5
1.8
V
DS
≥
–10 V
8
4
3 V = –10 V
GS
T
J
= 25°C
2
6
4
T
J
= 25°C
2
T
J
= 100°C
0
3
3.5
T
J
= –55°C
4
4.5
5
5.5
6
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
R
DS(on),
DRAIN–TO–SOURCE RESISTANCE (W)
R
DS(on),
DRAIN–TO–SOURCE RESISTANCE (W)
0.100
0.20
Figure 2. Transfer Characteristics
T
J
= 25°C
0.15
V
GS
= –4.5 V
0.10
V
GS
= –10 V
0.05
0.075
I
D
= –4.0 A
T
J
= 25°C
0.050
0.025
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
7
8
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
–I
D,
DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
R
DS(on),
DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
1.6
I
D
= –2.0 A
V
GS
= –10 V
–I
DSS
, LEAKAGE (nA)
1.4
100
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
1.2
T
J
= 125°C
1
10
T
J
= 100°C
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
0
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
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NTF5P03T3
TYPICAL ELECTRICAL CHARACTERISTICS
V
DS
= 0 V
C
iss
V
GS
= 0 V
–V
DS
, DRAIN–TO–SOURCE VOLTAGE (V)
–V
GS
, GATE–TO–SOURCE VOLTAGE (V)
6000
5000
C, CAPACITANCE (pF)
4000
C
rss
3000
C
iss
2000
C
oss
1000
C
rss
0
10
–V
GS
0 –V
DS
10
20
30
12.5
–V
DS
10
Q
T
20
25
T
J
= 25°C
7.5
–V
GS
Q
1
Q
2
I
D
= –2 A
T
J
= 25°C
15
5.0
10
2.5
5
0
0
10
20
30
40
50
0
60
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
–I
S
, SOURCE CURRENT (AMPS)
V
DD
= –15 V
I
D
= –4.0 A
V
GS
= –10 V
t
d(off)
t, TIME (ns)
3
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
V
GS
= 0 V
T
J
= 25°C
2
t
f
100
t
r
1
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
–V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1.0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
–I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
E
AS
, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
350
Figure 10. Diode Forward Voltage versus Current
I
D
= –6 A
300
250
200
150
100
50
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
dc
1
10 ms
1 ms
0.1
100
ms
10
ms
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
–V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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