NTD2955, NVD2955
Power MOSFET
−60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
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V
(BR)DSS
−60 V
R
DS(on)
TYP
155 mW @ −10 V, 6 A
D
I
D
MAX
−12 A
•
Avalanche Energy Specified
•
I
DSS
and V
DS(on)
Specified at Elevated Temperature
•
Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
•
NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
10 ms)
Drain Current
Dr−
Continuous @ T
a
= 25°C
Dr−
Single Pulse (t
p
≤
10 ms)
Total Power Dissipation @ T
a
= 25°C
Operating and Storage Temperature
Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc, Peak
I
L
= 12 Apk, L = 3.0 mH, R
G
= 25
W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
−60
±
20
±
25
−12
−18
55
−55 to
175
216
Unit
Vdc
Vdc
Vpk
Adc
Apk
W
P−Channel
G
S
4
4
1 2
3
DPAK
CASE 369C
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
NT
2955G
4
Drain
AYWW
NT
2955G
1 2 3
Gate Drain Source
= Assembly Location*
= Specific Device Code (DPAK)
= Specific Device Code (IPAK)
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
NTD2955/D
°C
mJ
2
1
3
Drain
Gate
Source
R
qJC
R
qJA
R
qJA
T
L
2.73
71.4
100
260
°C/W
A
NT2955/NV2955
NT2955
Y
WW
G
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in
2
).
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
March, 2017 − Rev. 16
NTD2955, NVD2955
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= −0.25 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −60 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −60 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250
mAdc)
(Negative Temperature Coefficient)
Static Drain−Source On−State Resistance
(V
GS
= −10 Vdc, I
D
= −6.0 Adc)
Drain−to−Source On−Voltage
(V
GS
= −10 Vdc, I
D
= −12 Adc)
(V
GS
= −10 Vdc, I
D
= −6.0 Adc, T
J
= 150°C)
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 3 and 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= −48 Vdc, V
GS
= −10 Vdc,
I
D
= −12 A)
DRAIN−SOURCE DIODE CHARACTERISTICS
(Note 3)
Diode Forward On−Voltage
(I
S
= 12 Adc, V
GS
= 0 V)
(I
S
= 12 Adc, V
GS
= 0 V, T
J
= 150°C)
Reverse Recovery Time
(I
S
= 12 A, dI
S
/dt = 100 A/ms ,V
GS
= 0 V)
V
SD
−
−
t
rr
t
a
t
b
Reverse Recovery Stored Charge
Q
RR
−
−
−
−
−1.6
−1.3
50
40
10
0.10
−
−
−
mC
−2.5
−
ns
Vdc
(V
DD
= −30 Vdc, I
D
= −12 A,
V
GS
= −10 V, R
G
= 9.1
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
GS
Q
GD
−
−
−
−
−
−
−
10
45
26
48
15
4.0
7.0
20
85
40
90
30
−
−
nC
ns
(V
DS
= −25 Vdc, V
GS
= 0 Vdc,
F = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
500
150
50
750
250
100
pF
V
GS(th)
−2.0
−
R
DS(on)
−
V
DS(on)
−1.86
−
gFS
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
−60
−
I
DSS
−
−
I
GSS
−
−
−
−
−10
−100
−100
−
67
−
−
Vdc
mV/°C
mAdc
nAdc
Vdc
−2.8
4.5
0.155
−4.0
−
0.180
Vdc
−2.6
−2.0
−
Mhos
mV/°C
W
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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2
NTD2955, NVD2955
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
25
24
22
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
3
5
7
9
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
T
J
= 25°C
V
GS
= -10 V
-9.5 V
-9 V
-8 V
-7 V
−I
D,
DRAIN CURRENT (A)
V
DS
≥
−10 V
T
J
= - 55°C
25°C
125°C
−I
D,
DRAIN CURRENT (A)
20
15
-6.5 V
-6 V
10
-5.5 V
5
-5 V
0
0
1
2
3
4
5
6
7
8
9
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
Figure 2. Transfer Characteristics
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
3
9
18
6
15
12
−I
D
, DRAIN CURRENT (AMPS)
21
24
- 55°C
25°C
T
J
= 125°C
V
GS
= −10 V
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0
3
9
18
6
12
15
-I
D
, DRAIN CURRENT (AMPS)
21
24
-15
V
V
GS
= −10 V
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
- 50
- 25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
V
GS
= −10 V
I
D
= −6 A
−I
DSS
, LEAKAGE (nA)
1000
V
GS
= 0 V
100
T
J
= 125°C
10
100°C
1
5
10 15 20 25 30 35 40 45 50 55
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
60
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
NTD2955, NVD2955
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1200
C, CAPACITANCE (pF)
1000
800
600
400
200
0
10
5
-V
GS
0
-V
DS
5
10
15
20
25
C
oss
C
rss
C
iss
C
rss
15
V
DS
Q
T
V
GS
7.5
5
2.5
0
Q
GS
Q
GD
30
20
10
0
16
I
D
= 12 A
T
J
= 25°C
60
50
40
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
12.5
10
C
iss
0
2
4
6
8
10
12
14
Q
T
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
15
−I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25°C
10
1000
V
DD
= −30 V
I
D
= −12 A
V
GS
= −10 V
T
J
= 25°C
t
f
t
r
t
d(off)
t, TIME (ns)
100
10
t
d(on)
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
Figure 10. Diode Forward Voltage versus Current
I
D
, DRAIN CURRENT (AMPS)
V
GS
= −15 V
SINGLE PULSE
T
C
= 25°C
10
100
ms
1 ms
1
di/dt
I
S
10 ms
dc
t
a
t
rr
t
b
TIME
t
p
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
0.25 I
S
I
S
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
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4
NTD2955, NVD2955
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t, TIME (s)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E-01
P
(pk)
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD2955G
NTD2955−1G
NTD2955T4G
NVD2955T4G*
SVD2955T4G*
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
75 Units / Rail
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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5
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