SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166C/D
The RF MOSFET Line
RF Power
Field Effect Transistors
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
•
MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
Gain = 13.5 dB
Efficiency = 50%
•
Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•
Facilitates Manual Gain Control, ALC and Modulation Techniques
•
Excellent Thermal Stability, Ideally Suited for Class A Operation
•
Low Crss — 4.0 pF @ VDS = 28 V
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
CASE 319–07, STYLE 3
G
S
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
20
4.0
70
0.4
– 65 to 150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
2.5
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
0.5
1.0
V
mA
µA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
VGS(th)
gfs
1.5
0.8
3.0
1.1
4.5
—
V
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
28
30
4.0
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA)
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA,
Load VSWR 30:1 at All Phase Angles)
Gps
η
13.5
50
16
55
—
—
dB
%
ψ
No Degradation in Output Power
REV 10
2
RFC1
C9
BIAS
R3
C8
R2
C4
RFC2
R1
Z1
RF
INPUT
Z2
C7
Z3
C2
C1
C3
DUT
C5
C6
Z4
RF
OUTPUT
C10
+
–
C11
VDD = 28 V
Vdc
–
+
C1, C7
C2, C6
C3
C4, C8
C5
C9, C10
C11
R1
R2
R3
RFC1
RFC2
Board Material
200 pF, Chip Capacitor
2–10 pF, Trimmer Capacitor, Johansen
27 pF, ATC 100 mil Chip Capacitor
0.1
µF,
Chip Capacitor
15 pF, ATC 100 mil Chip Capacitor
680 pF, Feedthru Capacitor
50
µF,
50 V, Electrolytic Capacitor
120
Ω,
1/2 W Resistor
10 kΩ, 1/2 W Resistor
1 kΩ, 1/2 W Resistor
Ferroxcube VK200 19/4B
10 Turns AWG #18, 0.125″ I.D., Enameled
0.062″ Teflon
®
Fiberglass
1 oz. Copper Clad Both Sides
ε
r = 2.56
Z1
0.120″ x 3.3″, Microstrip Line
350 mils
C2
600 mils
C3
Z2
0.120″ x 2.1″, Microstrip Line
C5
C6
825 mils
1650 mils
Z3, Z4
0.120″ x 0.25″, Microstrip Line
Figure 1. MRF166C 500 MHz Test Circuit
TYPICAL CHARACTERISTICS
100
50
C, CAPACITANCE (pF)
Coss
Ciss
10
I D, DRAIN CURRENT (AMPS)
TC = 25°C
20
10
5
VGS = 0 V
f = 1 MHz
0
1
Crss
2
1
5
10
15
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
25
0.1
0
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
100
Figure 2. Capacitance versus Drain–Source Voltage
Figure 3. DC Safe Operating Area
REV 10
3
TYPICAL CHARACTERISTICS
32
28
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
275 MHz
24
20
16
12
8
4
0
0
VDD = 28 V
IDQ = 25 mA
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Pin, INPUT POWER (WATTS)
400 MHz
f = 500 MHz
12
10
8
f = 500 MHz
6
4
2
0
VDD = 13.5 V
IDQ = 25 mA
0
0.05
0.1
0.15 0.2 0.25 0.3 0.35
Pin, INPUT POWER (WATTS)
0.4
0.45
0.5
400 MHz
Figure 4. Output Power versus Input Power
Figure 5. Output Power versus Input Power
40
35
Pout , OUTPUT POWER (WATTS)
30
25
0.5 W
20
15
10
5
0
12
14
16
18
20
22
24
Pin, INPUT POWER (WATTS)
26
28
0.18 W
Pin = 1 W
Pout , OUTPUT POWER (WATTS)
f = 500 MHz
IDQ = 25 mA
35
30
25
20
0.15 W
15
10
5
0
12
14
16
18
20
22
24
Pin, INPUT POWER (WATTS)
26
28
f = 400 MHz
IDQ = 25 mA
Pin = 0.5 W
0.3 W
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
REV 10
4
VDD = 28 V, IDQ = 25 mA, Pout = 20 Watts
Zo = 10
Ω
500 MHz
500 MHz
ZOL*
400 MHz
400 MHz
f = 290 MHz
Zin
f = 290 MHz
f
MHz
500
400
290
Zin
Ohms
2.09 – j2.77
0.93 – j3.80
2.63 – j7.58
ZOL*
Ohms
4.87 – j2.63
3.09 – j5.24
7.35 – j8.67
ZOL* =Conjugate of the optimum load impedance into
which the device output operates at a given output
power, voltage and frequency.
Figure 8. Series Equivalent Input and Output Impedance
Figure 9. MRF166C Test Fixture
REV 10
5
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