Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | TSOP2 |
包装说明 | TSOP2, TSOP54,.46,32 |
针数 | 54 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
访问模式 | FOUR BANK PAGE BURST |
最长访问时间 | 5.4 ns |
其他特性 | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 133 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G54 |
JESD-609代码 | e0 |
长度 | 22.22 mm |
内存密度 | 268435456 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 16 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 54 |
字数 | 16777216 words |
字数代码 | 16000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 16MX16 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP2 |
封装等效代码 | TSOP54,.46,32 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
电源 | 3.3 V |
认证状态 | Not Qualified |
刷新周期 | 8192 |
座面最大高度 | 1.2 mm |
自我刷新 | YES |
连续突发长度 | 1,2,4,8,FP |
最大待机电流 | 0.002 A |
最大压摆率 | 0.2 mA |
最大供电电压 (Vsup) | 3.6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 3.3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING |
端子节距 | 0.8 mm |
端子位置 | DUAL |
宽度 | 10.16 mm |
Base Number Matches | 1 |
K4S561632C-TC7C | K4S561632C-TL7C | K4S561632C-TC1L | K4S561632C-TC75 | K4S561632C-TL75 | AH1NAUYR6 | K4S561632C-TL1H | K4S561632C-TC1H | K4S561632C-TL60 | K4S561632C-TC60 | |
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描述 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Illuminated Pushbutton - 19mm | Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | - | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
包装说明 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | - | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 | TSOP2, TSOP54,.46,32 |
针数 | 54 | 54 | 54 | 54 | 54 | - | 54 | 54 | 54 | 54 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | - | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | - | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 5.4 ns | 5.4 ns | 6 ns | 5.4 ns | 5.4 ns | - | 6 ns | 6 ns | 5 ns | 5 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
最大时钟频率 (fCLK) | 133 MHz | 133 MHz | 100 MHz | 133 MHz | 133 MHz | - | 100 MHz | 100 MHz | 166 MHz | 166 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | - | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | - | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
JESD-30 代码 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | - | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 | R-PDSO-G54 |
JESD-609代码 | e0 | e0 | e0 | - | e0 | - | e0 | e0 | e0 | e0 |
长度 | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | - | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm |
内存密度 | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | - | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | - | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 16 | 16 | 16 | 16 | 16 | - | 16 | 16 | 16 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
端子数量 | 54 | 54 | 54 | 54 | 54 | - | 54 | 54 | 54 | 54 |
字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | - | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
字数代码 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | - | 16000000 | 16000000 | 16000000 | 16000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | - | 70 °C | 70 °C | 70 °C | 70 °C |
组织 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | - | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | - | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
封装等效代码 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | - | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 | TSOP54,.46,32 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | - | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | - | 8192 | 8192 | 8192 | 8192 |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | - | YES | YES | YES | YES |
连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | - | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | - | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
最大压摆率 | 0.2 mA | 0.2 mA | 0.19 mA | 0.2 mA | 0.2 mA | - | 0.19 mA | 0.19 mA | 0.22 mA | 0.22 mA |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | - | 3 V | 3 V | 3 V | 3 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | YES | YES | YES | YES | YES | - | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | - | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | - | DUAL | DUAL | DUAL | DUAL |
宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | - | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
厂商名称 | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
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