Peripheral Driver, 8 Driver, BIPolar, CDIP18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP18,.3 |
| 针数 | 18 |
| Reach Compliance Code | unknown |
| 驱动器位数 | 8 |
| JESD-30 代码 | R-XDIP-T18 |
| JESD-609代码 | e0 |
| 端子数量 | 18 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 最大输出电流 | 0.35 A |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 50 V |
| 认证状态 | Not Qualified |
| 标称供电电压 | 50 V |
| 表面贴装 | NO |
| 技术 | BIPOLAR |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| ULS-2823H | ULS-2803R | ULS-2803H | |
|---|---|---|---|
| 描述 | Peripheral Driver, 8 Driver, BIPolar, CDIP18 | Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Glass-Sealed, 18 Pin, HERMETIC SEALED, CERAMIC GLASS, DIP-18 | Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin, HERMETIC SEALED, METAL GLASS, DIP-18 |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | DIP, DIP18,.3 | IN-LINE, R-GDIP-T18 | IN-LINE, R-CDIP-T18 |
| 针数 | 18 | 18 | 18 |
| Reach Compliance Code | unknown | unknown | unknown |
| JESD-30 代码 | R-XDIP-T18 | R-GDIP-T18 | R-CDIP-T18 |
| 端子数量 | 18 | 18 | 18 |
| 封装主体材料 | CERAMIC | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL |
| 最高工作温度 | 125 °C | - | 125 °C |
| 最低工作温度 | -55 °C | - | -55 °C |
| Base Number Matches | 1 | 1 | - |
| 厂商名称 | - | Vishay(威世) | Vishay(威世) |
| ECCN代码 | - | EAR99 | EAR99 |
| 其他特性 | - | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
| 最大集电极电流 (IC) | - | 0.5 A | 0.5 A |
| 集电极-发射极最大电压 | - | 50 V | 50 V |
| 配置 | - | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | - | 1000 | 1000 |
| 元件数量 | - | 8 | 8 |
| 极性/信道类型 | - | NPN | NPN |
| 晶体管应用 | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON |
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