Data Sheet
1.2V Drive Nch MOSFET
RU1C002UN
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
UMT3F
2.0
0.32
0.9
0.53
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : QR
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RU1C002UN
Taping
TCL
3000
Inner circuit
(3)
∗1
∗2
(1)
(2)
(1) Gate
(2) Source
(3) Drain
1
BODY DIODE
2
ESD PROTECTION DIODE
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
Limits
20
8
200
*1
*2
Unit
V
V
mA
mA
mW
C
C
V
DSS
Continuous
Pulsed
V
GSS
I
D
I
DP
P
D
Tch
Tstg
400
150
150
55
to
150
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a reference land.
Symbol
Rth (ch-a)
*
Limits
833
Unit
C
/ W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.09 - Rev.A
0.53
0.425
Features
1) Low on-resistance.
2) Low voltage drive(1.2V drive).
0.425
(3)
1.25
2.1
RU1C002UN
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
Min.
-
20
-
0.3
-
-
-
-
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
400
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.8
1.0
1.2
1.6
-
25
10
10
5
10
15
10
Max.
10
-
1
1.0
1.2
1.4
2.4
4.8
-
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
Unit
A
V
A
V
Conditions
V
GS
=8V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=200mA, V
GS
=2.5V
I
D
=200mA, V
GS
=1.8V
I
D
=40mA, V
GS
=1.5V
I
D
=20mA, V
GS
=1.2V
mS V
DS
=10V, I
D
=200mA
V
DS
=10V
V
GS
=0V
f=1MHz
V
DD
10V, I
D
=150mA
V
GS
=4.0V
R
L
=68
R
G
=10
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=100mA, V
GS
=0V
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2/5
2011.09 - Rev.A
RU1C002UN
Electrical
characteristics
Data Sheet
0.5
0.4
DRAIN CURRENT : I
D
[A]
V
GS
= 1.5V
0.3
Ta=25°C
Pulsed
DRAIN CURRENT : I
D
[A]
0.5
0.4
0.3
0.2
V
GS
= 1.5V
0.1
0
Ta=25°C
Pulsed
0
2
4
6
8
10
V
GS
= 1.2V
V
GS
= 2.5V
V
GS
= 1.8V
V
GS
= 1.3V
DRAIN CURRENT : I
D
(A)
1
V
DS
=10V
Pulsed
0.1
V
GS
= 1.3V
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.8V
V
GS
= 1.2V
0.01
Ta=125°C
75°C
25°C
−25°C
0.001
0.0001
0.00001
0.0
0.5
1.0
1.5
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.3 Typical transfer characteristics
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta= 25°C
Pulsed
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 1.2V
V
GS
= 1.5V
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.0V
V
GS
= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
1000
1000
100
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
DRAIN-CURRENT : I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
DRAIN-CURRENT : I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 1.8V
Pulsed
10000
V
GS
= 1.5V
Pulsed
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 1.2V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
DRAIN-CURRENT : I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
DRAIN-CURRENT : I
D
[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ)
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3/5
2011.09 - Rev.A
RU1C002UN
Data Sheet
1
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
SOURCE CURRENT : I
S
(A)
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[Ω]
V
DS
= 10V
Pulsed
V
GS
=0V
Pulsed
2.5
I
D
= 0.2A
2
1.5
1
0.5
0
0
2
4
6
8
I
D
= 0.02A
Ta=25°C
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
DRAIN-CURRENT : I
D
[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
0.01
0.0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.11 Source current vs.
source-drain voltage
1000
SWITHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta
=25°C
V
DD
=10V
V
GS
=4V
R
G
=10Ω
Pulsed
100
Ta
=25°C
f=1MH
Z
V
GS
=0V
100
C
iss
10
C
oss
C
rss
10
t
d(off)
t
f
t
d(on)
t
r
1
0.01
0.1
DRAIN CURRENT : I
D
(A)
1
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
Fig.13 Switching characteristics
Fig.14 Typical capacitance vs.
drain-source voltage
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4/5
2011.09 - Rev.A
RU1C002UN
Measurement circuits
Data Sheet
Pulse width
V
GS
I
D
R
L
D.U.T.
R
G
V
DD
V
DS
V
GS
V
DS
50%
10%
10%
90%
t
d(on)
t
on
t
r
90%
50%
10%
90%
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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5/5
2011.09 - Rev.A
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