RN2701JE~RN2706JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2701JE,RN2702JE,RN2703JE
RN2704JE,RN2705JE,RN2706JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (5-pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
•
Complementary to RN1701JE~RN1706JE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2701JE
RN2702JE
R2
RN2703JE
RN2704JE
E
RN2705JE
RN2706JE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
―
―
2-2P1D
Weight: 0.003 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2701JE~
2706JE
RN2701JE~
2704JE
RN2705JE,
RN2706JE
Symbol
V
CBO
V
CEO
Rating
−50
−50
−10
V
EBO
−5
I
C
P
C
(Note 1)
T
j
T
stg
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Equivalent Circuit
(top view)
5
Q1
4
Q2
Emitter-base voltage
Collector current
Collector power dissipation RN2701JE~
2706JE
Junction temperature
Storage temperature range
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
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