RN2107FS~RN2109FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2107FS,RN2108FS,RN2109FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
Incorporating a bias resistor into a transistor reduces parts count.
0.6±0.05
0.15±0.05
Unit: mm
0.35±0.05
•
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
Complementary to RN1107FS~RN1109FS
1
3
2
0.8±0.05
1.0±0.05
0.1±0.05
Equivalent Circuit and Bias Resistor Values
fSM
C
Type No.
RN2107FS
RN2108FS
R2
RN2109FS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.48
-0.04
+0.02
0.1±0.05
1.BASE
2.EMITTER
3.COLLECOTR
B
R1
JEDEC
JEITA
TOSHIBA
―
―
2-1E1A
Weight: 0.0006 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2107FS~
RN2109FS
RN2107FS
Emitter-base voltage
RN2108FS
RN2109FS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107FS~
RN2109FS
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−20
−20
−6
−7
−15
−50
50
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
0.2±0.05
RN2107FS~RN2109FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN2107FS~2109FS
RN2107FS
Emitter cut-off current
RN2108FS
RN2109FS
RN207FS
DC current gain
RN2108FS
RN2109FS
Collector-emitter
saturation voltage
RN2107FS~2109FS
RN2107FS
Input voltage (ON)
RN2108FS
RN2109FS
RN2107FS
Input voltage (OFF)
RN2108FS
RN2109FS
Collector output
capacitance
RN2107FS~2109FS
RN2107FS
Input resistor
RN2108FS
RN2109FS
RN2107FS
Resistor ratio
RN2108FS
RN2109FS
R1/R2
⎯
R1
⎯
C
ob
V
CB
= −10
V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
= −5
V,
I
C
= −0.1
mA,
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
= −20
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
V
EB
= −7
V, I
C
=
0
V
EB
= −15
V, I
C
=
0
V
CE
= −5
V,
I
C
= −10
mA
I
C
= −5
mA,
I
B
= −0.25
mA
V
CE
= −0.2
V,
I
C
= −5
mA
Min
⎯
⎯
−0.088
−0.085
−0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
−100
−500
−0.131
−0.126
−0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.213
0.468
2.14
⎯
⎯
−0.15
−1.5
−2.2
−5.0
−1.0
−1.1
−2.6
V
V
V
⎯
−0.7
−0.8
−1.6
−0.5
−0.6
−1.3
⎯
8
17.6
37.6
0.17
0.374
1.71
⎯
12
26.4
56.4
0.255
0.562
2.56
pF
kΩ
2
2007-11-01
RN2107FS~RN2109FS
RN2107FS
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2107FS
IC - VI(OFF)
-10
Ta=100°C
-1000
Ta=100°C
25
-25
25
-1
-25
EMITTER COMMON
VCE= -0.2V
-0.1
-0.1
-100
EMITTER COMMON
VCE= -5V
-10
-0.2
-1
-10
-100
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2108FS
-100
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2108FS
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
EMITTER COMMON
VCE= -5V
-10
Ta=100°C
25
-1
-1000
Ta=100°C
25
-25
-25
EMITTER COMMON
VCE= -0.2V
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
RN2109FS
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2109FS
IC - VI(OFF)
EMITTER COMMON
VCE= -0.2V
-10
EMITTER COMMON
VCE= -5V
-1000
Ta=100°C
25
-25
Ta=100°C
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.6
-1
-1.4
-1.8
-2.2
-2.6
-3
INPUT VOLTAGE VI(ON) ( V)
INPUT VOLTAGE VI(OFF) ( V)
3
2007-11-01
RN2107FS~RN2109FS
RN2107FS
1000
hFE - IC
-1000
COLLECTOR-EMMITER SATURATION
VOLTAGE VCE(sat) (mV)
RN2107FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
Ta=100°C
DC CURRENT GAIN hFE
25
100
-25
-100
Ta=100°C
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
25
-25
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2108FS
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2108FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
Ta=100°C
DC CURRENT GAIN hFE
25
100
-25
-100
Ta=100°C
25
-25
-10
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2109FS
1000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2109FS
VCE(sat) - IC
EMITTER COMMON
IC / IB=20
DC CURRENT GAIN hFE
Ta=100°C
100
-25
25
-100
Ta=100°C
25
-25
EMITTER COMMON
VCE= -5V
10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
-10
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2007-11-01
RN2107FS~RN2109FS
Type Name
Marking
Type name
RN2107FS
U6
Type name
RN2108FS
U7
Type name
RN2109FS
U8
HANDLING PRECAUTION
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that
come into direct contact with devices should be made of anti-static materials.
5
2007-11-01
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