Datasheet> 器件分类 > 分立半导体> 晶体管> MRF237

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MRF237: 产品描述RF Small Signal Bipolar Transistor, 1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3 PIN; 产品类别分立半导体晶体管; 文件大小20KB，共1页; 制造商Advanced Semiconductor, Inc.

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MRF237概述

RF Small Signal Bipolar Transistor, 1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3 PIN

MRF237规格参数

参数名称	属性值
零件包装代码	TO-39
包装说明	CYLINDRICAL, O-MBCY-W3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
基于收集器的最大容量	20 pF
集电极-发射极最大电压	18 V
配置	SINGLE
最小直流电流增益 (hFE)	5
最高频带	VERY HIGH FREQUENCY BAND
JEDEC-95代码	TO-39
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	NPN
最大功率耗散 (Abs)	8 W
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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MRF237

SILICON NPN RF POWER TRANSISTOR

DESCRIPTION:

The

MRF237

designed for large signal power

amplifier applications operating to

225 MHz

PACKAGE STYLE TO-39

MAXIMUM RATINGS

CBO

CEO

DISS

STG

1.0 A

36 V

18 V

8.0 W @ T

= 25 °C

-65 °C to +200 °C

22 °C/W

1 = EMITTER

2 = BASE

3 = COLLECTOR

TRANS1.SYM

CHARACTERISTICS

SYMBOL

CEO

CES

EBO

CBO

= 10 mA

= 25 °C

TEST CONDITIONS

= 5.0 mA

= 1.0 mA

= 15 V

= 5.0 V

= 15 V

= 12.5 V

OUT

= 4.0 W

= 250 mA

f = 1.0 MHz

f = 175 MHz

MINIMUM

4.0

TYPICAL

MAXIMUM

UNITS

.25

5.0

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1202

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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