Datasheet> 器件分类 > 存储> 存储> MBM29LV008BA-90PTN-E1

文档预览

MBM29LV008BA-90PTN-E1: 产品描述Flash, 1MX8, 90ns, PDSO40, PLASTIC, TSOP1-40; 产品类别存储存储; 文件大小377KB，共56页; 制造商SPANSION; 官网地址http://www.spansion.com/

下载文档详细参数选型对比全文预览

MBM29LV008BA-90PTN-E1概述

Flash, 1MX8, 90ns, PDSO40, PLASTIC, TSOP1-40

MBM29LV008BA-90PTN-E1规格参数

参数名称	属性值
零件包装代码	TSOP1
包装说明	PLASTIC, TSOP1-40
针数	40
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	90 ns
启动块	BOTTOM
JESD-30 代码	R-PDSO-G40
长度	18.4 mm
内存密度	8388608 bit
内存集成电路类型	FLASH
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	40
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
编程电压	3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
类型	NOR TYPE
宽度	10 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

MBM29LV008TA

-70/-90

MBM29LV008BA

-70/-90

Data Sheet

(Retired Product)

MBM29LV008TA

90-70/-90

Cover Sheet

/MBM29LV008BA

-70/-

This product has been retired and is not recommended for new designs. Availability of this document is retained for reference

and historical purposes only.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

made are the result of normal data sheet improvement and are noted in the document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number

MBM29LV008TA/BA

Revision

DS05-20858-7E

Issue Date

July 26, 2007

MBM29LV008TA/BA

-70/90

(Continued)

The MBM29LV008TA/BA are pin and command set compatible with JEDEC standard E

PROMs. Commands

are written to the command register using standard microprocessor write timings. Register contents serve as

input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally

latch addresses and data needed for the programming and erase operations. Reading data out of the devices

is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV008TA/BA are programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the devices automatically time the erase pulse widths and

verify proper cell margin.

Any individual sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)

The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV008TA/BA are erased when shipped from the

factory.

The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the devices internally reset to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29LV008TA/BA memories electrically erase the entire chip

or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte

at a time using the EPROM programming mechanism of hot electron injection.

Retired Product DS05-20858-7E_July 26, 2007

MBM29LV008BA-90PTN-E1相似产品对比

	MBM29LV008BA-90PTN-E1	MBM29LV008BA-70PTN-E1	MBM29LV008BA-90PTR-E1	MBM29LV008BA-70PTR-E1	MBM29LV008TA-70PTR-E1	MBM29LV008TA-90PTN-E1	MBM29LV008TA-90PTR-E1	MBM29LV008TA-70PTN-E1
描述	Flash, 1MX8, 90ns, PDSO40, PLASTIC, TSOP1-40	Flash, 1MX8, 70ns, PDSO40, PLASTIC, TSOP1-40	Flash, 1MX8, 90ns, PDSO40, PLASTIC, REVERSE, TSOP1-40	Flash, 1MX8, 70ns, PDSO40, PLASTIC, REVERSE, TSOP1-40	Flash, 1MX8, 70ns, PDSO40, PLASTIC, REVERSE, TSOP1-40	Flash, 1MX8, 90ns, PDSO40, PLASTIC, TSOP1-40	Flash, 1MX8, 90ns, PDSO40, PLASTIC, REVERSE, TSOP1-40	Flash, 1MX8, 70ns, PDSO40, PLASTIC, TSOP1-40
零件包装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
包装说明	PLASTIC, TSOP1-40	PLASTIC, TSOP1-40	PLASTIC, REVERSE, TSOP1-40	PLASTIC, REVERSE, TSOP1-40	PLASTIC, REVERSE, TSOP1-40	PLASTIC, TSOP1-40	PLASTIC, REVERSE, TSOP1-40	PLASTIC, TSOP1-40
针数	40	40	40	40	40	40	40	40
Reach Compliance Code	unknown	unknown	compliant	compliant	compliant	unknown	compliant	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	90 ns	70 ns	90 ns	70 ns	70 ns	90 ns	90 ns	70 ns
启动块	BOTTOM	BOTTOM	BOTTOM	BOTTOM	TOP	TOP	TOP	TOP
JESD-30 代码	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40
长度	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	40	40	40	40	40	40	40	40
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TSOP1-R	TSOP1-R	TSOP1-R	TSOP1	TSOP1-R	TSOP1
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	240	260	260	260	240	260	240
编程电压	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	3 V	2.7 V	3 V	3 V	2.7 V	2.7 V	3 V
标称供电电压 (Vsup)	3 V	3.3 V	3 V	3.3 V	3.3 V	3 V	3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	40	40	40	30	40	30
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm
厂商名称	-	-	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION

MBM29LV008BA-90PTN-E1

MBM29LV008BA-90PTN-E1概述

MBM29LV008BA-90PTN-E1规格参数

文档预览

MBM29LV008BA-90PTN-E1相似产品对比

推荐资源