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BZT52-C3-D4

产品描述Zener Diode, 3V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2
产品类别分立半导体    二极管   
文件大小323KB,共9页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
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BZT52-C3-D4概述

Zener Diode, 3V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2

BZT52-C3-D4规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证不符合
包装说明R-PDSO-G2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗95 Ω
JESD-30 代码R-PDSO-G2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散0.41 W
认证状态Not Qualified
标称参考电压3 V
表面贴装YES
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
最大电压容差5%
工作测试电流5 mA
Base Number Matches1

文档预览

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BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
SOD-123
.022 (0.55)
VZ Range
2.4 to 75
Power Dissipation
410mW
Cathode Band
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Mounting Pad Layout
0.094 (2.40)
0.055 (1.40)
0.055 (1.40)
.006 (0.15)
max.
Top View
Dimensions in inches
and (millimeters)
.004 (0.1)
max.
.067 (1.70)
.055 (1.40)
.053 (1.35)
max.
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ±5%. Replace suffix “C” with “B”
for ±2% tolerance. Other tolerances and other
Zener voltages are available upon request.
• These diodes are also available in other case
styles and other configurations including: the
SOT-23 case with type designation BZX84 series,
the dual zener diode common anode configuration
in the SOT-23 case with type
designation AZ23 series and the dual zener diode
common cathode configuration in the SOT-23 case
with type designation DZ23 series.
.010 (0.25)
min.
Mechanical Data
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01g
Packaging Codes/Options:
D3 / 10K per 13” reel (8mm tape)
D4 / 3K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Thermal Resistance
Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) Diode on Ceramic Substrate 0.7mm; 2.5mm
2
area
(2) Valid provided that electrodes are kept at ambient temperature
A
= 25°C unless otherwise noted)
Symbol
Value
410
(1)
300
(2)
150
–65 to +150
Unit
P
tot
R
ΘJA
T
j
T
S
mW
°C/W
°C
°C
Document Number 88314
26-Apr-02
www.vishay.com
1

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