Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
•
•
Capacitors 6pF C
G
and 10pF C
D
built-in
Standby function with typical 6µA (V
DD
= 5 V)
low standby current (PT7C5009AL only)
Power-save pull-up resistor built-in
(PT7C5009ALx only)
Inverter amplifier feedback resistor built-in
16 mA (V
DD
= 4.5 V) drive capability
(PT7C5009AKx, ALx, ANx, CNx)
4 mA (V
DD
= 4.5 V) drive capability
(PT7C5009AHx)
Output three-state function
2.25 to 5.5 V supply voltage (PT7C5009ALxDE)
2.7 to 5.5 V supply voltage (PT7C5009AHx,
ALxW, ANx, CNx)
•
•
Clock output (f
O
, f
O
/2, f
O
/4, f
O
/8,f
O
/16, f
O
/32
determined by internal connection, f
O
is oscillator
frequency)
8-pin SOIC package (PT7C5009xxxW), Die form
(PT7C5009xxxDE) and Wafer form
(PT7C5009AxxWF) available
Description
The PT7C5009 series are crystal oscillator module ICs
that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency
capacitors are built-in, eliminating the need for
external components to make a stable fundamental-
harmonic oscillator.
Application
•
Used for crystal oscillator
Ordering Information
Part no.
PT7C5009AHxW
PT7C5009AHx-1DE
PT7C5009AHx-2DE
PT7C5009AHx-1WF
PT7C5009AHx-2WF
PT7C5009AKxW
PT7C5009AKx-1DE
PT7C5009AKx-2DE
PT7C5009AKx-1WF
Package
type
SOIC-8
DIE form
DIE form
Wafer form
Wafer form
SOIC-8
DIE form
DIE form
Wafer form
Part no.
PT7C5009AKx-2WF
PT7C5009ANxW
PT7C5009ANx-1DE
PT7C5009ANx-2DE
PT7C5009ANx-1WF
PT7C5009ANx-2WF
PT7C5009ALxW
PT7C5009ALx-1DE
PT7C5009ALx-2DE
Package
type
Wafer form
SOIC-8
DIE form
DIE form
Wafer form
Wafer form
SOIC-8
DIE form
DIE form
Part no.
PT7C5009ALx-1WF
PT7C5009ALx-2WF
PT7C5009CNxW
PT7C5009CNx-1DE
PT7C5009CNx-2DE
PT7C5009CNx-1WF
PT7C5009CNx-2WF
Package
type
Wafer form
Wafer form
SOIC-8
DIE form
DIE form
Wafer form
Wafer form
Note 1:
Lead free package is available by adding “E” after each part no. For example: PT7C5009AHxWE.
Note 2:
Below is the detailed definition of part no.
Note 3:
“-1” & “-2” show the different die thickness; “-1”: 265±25um; “-2”: 220±20um.
5009
PT7C
1
AH
W
Device Type
Clock series
XO 5009 Series
Serial Type
Series
AH
AK
AN
AL
CN
V
DD
range
(V)
2.7~5.5
4.5~5.5
2.7~5.5
2.25~5.5
2.7~5.5
Output freq. (MHz)
3V V
DD
5V V
DD
16
30
40
40
-
40
40
40
40
30
30
Standby
function
No
Yes
No
Package
W: SOIC-8
DE: die form
WF: Wafer form
Output frequency
Suffix f
output
(V)
1
2
3
4
5
6
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
f
O
/32
Series
AK,
CN
AL,
AN
AH
PT0194(05/06)
1
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Series Configuration
Series
Part No.
PT7C5009AH1
PT7C5009AH2
PT7C5009AH3
PT7C5009AH4
PT7C5009AK1
PT7C5009AK2
PT7C5009AN1
PT7C5009AN2
PT7C5009AN3
PT7C5009AN4
PT7C5009AN5
PT7C5009AN6
PT7C5009AL1
PT7C5009AL2
PT7C5009AL3
PT7C5009AL4
PT7C5009AL5
PT7C5009AL6
PT7C5009CN1
PT7C5009CN2
Outp
ut
freq.
f
o
f
o
/2
f
o
/4
f
o
/8
f
o
f
o
/2
f
o
f
o
/2
f
o
/4
f
o
/8
f
o
/16
f
o
/32
f
o
f
o
/2
f
o
/4
f
o
/8
f
o
/16
f
o
/32
f
o
f
o
/2
V
DD
(V)
2.7 ~
5.5
4.5 ~
5.5
Output at 3V V
DD
Max load Max freq.
(pF)
(MHz)
15
16
Output at 5V V
DD
Max load Max freq.
(pF)
(MHz)
15
30
Input
level
Output
duty
level
CMOS
Standby
function
AH
TTL
-
AK
-
-
15
40
TTL
TTL
-
AN
2.7 ~
5.5
30
40
50
40
TTL
CMOS
-
AL
2.7 ~
5.5
30
40
50
40
CMOS
CMOS
√
CN
2.7 ~
5.5
15
30
50
30
TTL
CMOS
-
Block Diagram
PT0194(05/06)
2
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Function Description
Series
AH, AK, AN, CN
AL
AH, AK, AN, CN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
AL series
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Power-save Pull-up Resistance (AL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
INH
HIGH (or open)
Low
HIGH (or open)
Low
Q
Any f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32 output frequency
High impedance
Any f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32 output frequency
High impedance
Stopped
Normal operation
Oscillator
Pin Configuration
PT7C5009xxxW
1
2
3
4
INH
XT
XT
GND
VDD
NC
NC
Q
8
7
6
5
SOIC-8 package
Pin Description
Pin
1
2
3
4
5
6,7
8
Sym.
INH
XT
XT
GND
Q
NC
V
DD
P
Type
I
I
O
P
O
Description
Output state control input. High impedance when LOW. In the case of the PT7C5009ALxS,
the oscillator stops and power-saving pull-up resistor built in.
Amplifier input.
Amplifier output.
Ground.
Output. Output frequency (fo, fo /2, fo /4, fo /8, fo /16, fo /32) determined by internal
connection, fo is oscillator frequency.
No connection.
Supply voltage.
Crystal oscillator connected between XT and XT
PT0194(05/06)
3
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature (die form).....................................................- 65oC to +150oC
Storage Temperature (package form) ........................................- 55oC to +125oC
Ambient Temperature with Power Applied..............................................- 40oC to +85oC
Supply Voltage to Ground Potential (V
DD
to GND ..................- 0.5V to7.0V
DC Input (All Other Inputs except V
DD
& GND) . -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................. 25mA
Power Dissipation......................................................................500mW (package form)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other condi-tions above those indicated in
the operational sec-tions of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
Recommended Operating Conditions
Sym
Parameter
Series
AH series
AK series
AN series
CN series
Die form
AL series
Package
form
V
IN
Input voltage
All series
AH series
AK series
f
≤
16MHz, 2.7V
≤
V
DD
≤
3.6V
f
≤
30MHz, 4.5V
≤
V
DD
≤
5.5V
f
≤
30MHz
30MHz < f
≤
40MHz
f
≤
40MHz, 2.7V
≤V
DD
< 4.5V
Die form
f
≤
40MHz, 4.5V
≤V
DD
≤5.5V
Package f
≤
40MHz, 2.7V
≤V
DD
< 5.5V
form
f
≤
30MHz, 4.5V
≤V
DD
≤5.5V
f
≤30MHz,
2.7V
≤V
DD
< 4.5V
f
≤30MHz,
4.5V
≤V
DD
≤5.5V
f
≤
40MHz, 2.7V
≤
V
DD
≤5.5V
Die form f
≤
30MHz, 2.3V
≤
V
DD
≤2.7V
f
≤
20MHz, 2.25V
≤
V
DD
≤2.75V
f
≤
40MHz, 2.7V
≤
V
DD
≤5.5V
Package
f
≤
30MHz, 2.7V
≤
V
DD
≤5.5V
form
f
≤
14.4MHz, 2.4V
≤
V
DD
≤2.7V
Condition
f
f
f
f
f
≤
16MHz
≤
30MHz
≤
40MHz
≤
40MHz
≤
30MHz
f
≤
20MHz
f
≤
30MHz
f
≤
40MHz
f
≤
40MHz
f
≤
14.4MHz
Min
2.7
4.5
2.7
2.25
2.3
2.7
2.4
GND
-20
-40
-20
-20
-40
-20
-40
-10
-40
-40
-20
-20
-20
-40
-20
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.5
5.5
2.75
2.7
5.5
2.7
V
DD
80
85
80
80
85
80
85
70
85
85
80
80
80
85
80
Unit
V
DD
Supply voltage
V
V
AN series
T
OPR
Operating
temperature
CN series
°C
AL series
PT0194(05/06)
4
Ver:5
Data Sheet
PT7C5009 series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation: V
DD
= 2.7 to 3.3V, PT7C5009AH/AN/CN: T
A
= -20 to 80°C, PT7C5009AL: T
A
= -40 to 85°C, unless otherwise
noted.
Sym
Parameter
Condition
PT7C5009AH1
16 MHz crystal
PT7C5009AH2
PT7C5009AH3
PT7C5009AH4
PT7C5009AL1
PT7C5009AN1
PT7C5009AL2
PT7C5009AN2
PT7C5009AL3
PT7C5009AN3
PT7C5009AL4
PT7C5009AN4
PT7C5009AL5
PT7C5009AN5
PT7C5009AL6
PT7C5009AN6
PT7C5009CN1
PT7C5009CN2
PT7C5009ALxW
PT7C5009ALxDE
PT7C5009AHx
PT7C5009ANx
PT7C5009CNx
PT7C5009ALx
PT7C5009AHx
PT7C5009ANx
PT7C5009CNx
PT7C5009ALx
PT7C5009AHx
PT7C5009ANx
PT7C5009CNx
PT7C5009ALx
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
0.7V
DD
-
-
40
0.6
Typ
4.5
3
1.5
8
5
4
3
3
2
7
4
2
4
-
-
-
-
-
-
Max
10
7
3
17
11
9
7
6
5
15
9
5
10
-
-
0.3
0.3V
DD
200
12
Unit
I
DD
Current consumption
INH
＝open,
40 MHz crystal.
Measurement cct 3,
For
load cct 2, C
L
= 15pF PT7C5009ALxW,
T
A
= -20 to 80°C.
mA
30 MHz crystal,
T
A
= -10 to 70 °C
I
ST
Standby current
INH = GND , Measurement cct 3
µA
V
IH
High level input voltage
INH pin
V
V
IL
Low level input voltage
INH pin
V
INH = GND
Measurement cct 4,
V
DD
= 3 V
kΩ
MΩ
R
UP
INH pull-up resistance
INH = GND
INH = 2.1V
16 MHz
-R
L
Negative resistance
V
DD
= 3 V, T
A
= 25°C
40 MHz
PT7C5009AHx
PT7C5009ALx
PT7C5009ANx
PT7C5009CNx
40
-
-
-
0.4
5.58
9.3
-
-450
-200
-100
-
6
10
200
-
-
-
1.1
6.42
10.7
kΩ
Ω
MΩ
pF
R
f
Feedback resistance
C
G
Built-in capacitance
C
D
-To be continued -
Measurement cct 5
Design value, determined by the internal wafer pattern
PT0194(05/06)
5
Ver:5
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