MBM29DL16XTE/BE
70/90
Data Sheet
(Retired Product)
MBM29DL16XTE/BE
70/90
Cover Sheet
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
MBM29DL16XTE/BE
Revision
DS05-20880-5E
Issue Date
July 13, 2007
SPANSION
Data Sheet
TM
Flash Memory
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
TM
product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20880-5E
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
MBM29DL16XTE/BE
70/90
■
FEATURES
Dual Operation
■
PRODUCT LINE UP
Part No.
• 0.23
μm
Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in
■GENERAL
DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
(Continued)
MBM29DL16XTE/BE70
70 ns
70 ns
30 ns
3.0 V
+0.6
V
−0.3
V
MBM29DL16XTE/BE90
90 ns
90 ns
35 ns
Address Access Time (Max)
CE Access Time (Max)
OE Access Time (Max)
Power Supply Voltage
■
PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-pin plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M11)
Retired Product DS05-20880-5E_July 13, 2007
MBM29DL16XTE/BE
70/90
(Continued)
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type)
48-pin FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Eight 4K word and thirty one 32K word sectors in word mode
Eight 8K byte and thirty one 64K byte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM region
64K byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At V
IL
, allows protection of boot sectors, regardless of sector group protection/unprotection status
At V
ACC
, increases program performance
• Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded Program
TM
* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low V
CC
write inhibit
≤
2.5 V
• Program Suspend/Resume
Suspends the program operation to allow a read in another sector with in the same device
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
Retired Product DS05-20880-5E_July 13, 2007
5
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