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AM29LV800B-120FC

产品描述Flash, 512KX16, 120ns, PDSO48, REVERSE, TSOP-48
产品类别存储    存储   
文件大小208KB,共48页
制造商AMD(超微)
官网地址http://www.amd.com
下载文档 详细参数 全文预览

AM29LV800B-120FC概述

Flash, 512KX16, 120ns, PDSO48, REVERSE, TSOP-48

AM29LV800B-120FC规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码TSOP
包装说明REVERSE, TSOP-48
针数48
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间120 ns
备用内存宽度8
启动块BOTTOM
命令用户界面YES
数据轮询YES
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PDSO-G48
JESD-609代码e0
长度18.4 mm
内存密度8388608 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模1,2,1,15
端子数量48
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织512KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TSOP1-R
封装等效代码TSSOP48,.8,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源3/3.3 V
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
反向引出线YES
座面最大高度1.2 mm
部门规模16K,8K,32K,64K
最大待机电流0.000005 A
最大压摆率0.03 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
切换位YES
类型NOR TYPE
宽度12 mm
Base Number Matches1

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PRELIMINARY
Am29LV800T/Am29LV800B
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit)
CMOS 3.0 Volt-only, Sectored Flash Memory
DISTINCTIVE CHARACTERISTICS
s
Single power supply operation
— Extended voltage range: 2.7 to 3.6 volt read and
write operations for battery-powered
applications
— Standard voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s
High performance
— Extended voltage range: access times as fast as
100 ns
— Standard voltage range: access times as fast as
90 ns
s
Ultra low power consumption
— Automatic Sleep Mode: 200 nA typical
— Standby mode: 200 nA typical
— Read mode: 2 mA/MHz typical
— Program/erase mode: 20 mA typical
s
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports control code and data storage on a
single device
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s
Top or bottom boot block configurations
available
s
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
write and verify bytes or words at specified
addresses
s
Minimum 100,000 write cycle guarantee per
sector
s
Package options
— 48-pin TSOP
— 44-pin SO
s
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s
Data Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s
Ready/Busy pin (RY/BY)
— Provides a hardware method of detecting
program or erase cycle completion
s
Erase suspend/resume commands
— Suspends the erase operation to read data from
or program data to another sector, then resumes
the erase operation
s
Hardware reset pin (RESET)
— Hardware method to reset the device to the read
mode
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication#
20478
Rev:
D
Amendment/0
Issue Date:
November 1997
Refer to AMD’s Website (www.amd.com) for the latest information.
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