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MJL21193, MJL21194
Preferred Device
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
•
Total Harmonic Distortion Characterized
•
High DC Current Gain
−
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h
FE
= 25 Min @ I
C
= 8 Adc
•
Excellent Gain Linearity
•
High SOA: 2.25 A, 80 V, 1 Second
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
16 AMPERE COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
MARKING
DIAGRAM
Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎ Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
Î Î Î
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
Value
250
400
5
400
16
30
5
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Peak (Note 1)
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
200
1.43
W
W/_C
_C
T
J
, T
stg
−65
to
+ 150
MJL2119x
AYYWWG
TO−3PBL
(TO−264)
CASE 340G
THERMAL CHARACTERISTICS
Characteristic
x
A
YY
WW
G
= 3 or 4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Symbol
R
qJC
Max
0.7
Unit
Thermal Resistance, Junction−to−Case
_C/W
ORDERING INFORMATION
Device
MJL21193
MJL21193G
MJL21194
MJL21194G
Package
TO−264
TO−264
(Pb−Free)
TO−264
TO−264
(Pb−Free)
Shipping
†
25 Units / Rail
25 Units / Rail
25 Units / Rail
25 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
January, 2007
−
Rev. 5
1
Publication Order Number:
MJL21193/D
MJL21193, MJL21194
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
25
8
−
−
−
−
75
−
2.2
Vdc
Vdc
−
−
−
−
1.4
4
I
S/b
Adc
4.0
2.25
−
−
−
−
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
−
100
100
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
BE(on)
V
CE(sat)
PNP MJL21193
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 10 V
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.1
T
J
= 25°C
f
test
= 1 MHz
NPN MJL21194
10 V
5V
V
CE
= 5 V
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
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2
MJL21193, MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
1000
1000
NPN MJL21194
hFE , DC CURRENT GAIN
T
J
= 100°C
100
25°C
−25
°C
V
CE
= 20 V
10
0.1
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
−25
°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJL21193
1000
1000
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJL21194
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
−25
°C
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
−25
°C
V
CE
= 5 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
Figure 6. DC Current Gain, V
CE
= 5 V
PNP MJL21193
30
I C, COLLECTOR CURRENT (A)
I C, COLLECTOR CURRENT (A)
25
20
15
10
5.0
T
J
= 25°C
0
0
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
25
0
0
1.5 A
I
B
= 2 A
1A
0.5 A
35
30
25
20
15
10
5.0
NPN MJL21194
I
B
= 2 A
1.5 A
1A
0.5 A
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
25
Figure 7. Typical Output Characteristics
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3
Figure 8. Typical Output Characteristics
MJL21193, MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
V
BE(sat)
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
I
C
/I
B
= 10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
V
BE(sat)
T
J
= 25°C
I
C
/I
B
= 10
NPN MJL21194
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21193
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
VBE(on) , BASE−EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
10
T
J
= 25°C
NPN MJL21194
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
IC, COLLECTOR CURRENT (AMPS)
1 SEC
10
1.0
0.1
1.0
10
100
1000
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dis-
sipation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 150°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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4
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