RS807M: 产品描述Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-8M, 4 PIN; 产品类别分立半导体二极管; 文件大小29KB，共2页; 制造商Rectron Semiconductor; 官网地址http://www.rectron.com/; 标准

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RS807M概述

Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-8M, 4 PIN

RS807M规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
包装说明	R-PSFM-T4
针数	4
Reach Compliance Code	not_compliant
其他特性	UL RECOGNIZED
最小击穿电压	1000 V
外壳连接	ISOLATED
配置	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON
二极管类型	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.1 V
JESD-30 代码	R-PSFM-T4
JESD-609代码	e3
最大非重复峰值正向电流	200 A
元件数量	4
相数	1
端子数量	4
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	8 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	265
认证状态	Not Qualified
最大重复峰值反向电压	1000 V
表面贴装	NO
端子面层	Matte Tin (Sn)
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

RS801M

THRU

RS807M

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes

FEATURES

Low leakage

Low forward voltage

Mounting position: Any

Surge overload rating: 200 amperes peak

Ideal for printed circuit boards

High forward surge current capability

RS-8M

.189 (4.8)

1.193 (30.3)

1.169 (29.7)

.197 (5)

MECHANICAL DATA

* UL listed the recognized component directory, file #E94233

* Epoxy: Device has UL flammability classification 94V-O

.150 (3.8)

.134 (3.4)

.800 (20.3)

.697 (17.7)

.441 (11.2)

.425 (10.8)

.173 (4.4)

.106 (2.7)

.096 (2.3)

.094 (2.4)

.078 (2.0)

.165 (4.2)

.150 (3.8)

.708 (18.0)

.669 (17.0)

.114 (2.9)

.098 (2.5)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

.043 (1.1)

.035 (0.9)

.402 (10.2) .303 (7.7)

.386 (9.8) .287 (7.3)

.303 (7.7)

.287 (7.3)

.031 (0.8)

.023 (0.6)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

(At T

= 25

C unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Output Current at Tc = 75 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load

Operating and Storage Temperature Range

STG

-55 to + 150

SYMBOL

RRM

RMS

FSM

RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS

100

200

140

200

400

280

400

8.0

200

600

420

600

800

560

800

1000

700

1000

Volts

Amps

ELECTRICAL CHARACTERISTICS

(At T

= 25 C unless otherwise noted)

CHARACTERISTICS

Maximum Forward Voltage Drop per element at 8.0A DC

Maximum Reverse Current at Rated

DC Blocking Voltage per element

= 25 C

SYMBOL

RS801M RS802M RS803M RS804M RS805M RS806M RS807M UNITS

1.1

0.2

Volts

uAmps

mAmps

2001-5

= 100 C

f.134 (3.1)

.122 (3.1)

RS807M相似产品对比

	RS807M	RS801M
描述	Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-8M, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RS-8M, 4 PIN
是否无铅	不含铅	不含铅
是否Rohs认证	符合	符合
包装说明	R-PSFM-T4	R-PSFM-T4
针数	4	4
Reach Compliance Code	not_compliant	not_compliant
其他特性	UL RECOGNIZED	UL RECOGNIZED
最小击穿电压	1000 V	50 V
外壳连接	ISOLATED	ISOLATED
配置	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
二极管元件材料	SILICON	SILICON
二极管类型	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)	1.1 V	1.1 V
JESD-30 代码	R-PSFM-T4	R-PSFM-T4
JESD-609代码	e3	e3
最大非重复峰值正向电流	200 A	200 A
元件数量	4	4
相数	1	1
端子数量	4	4
最高工作温度	150 °C	150 °C
最低工作温度	-55 °C	-55 °C
最大输出电流	8 A	8 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	265	265
认证状态	Not Qualified	Not Qualified
最大重复峰值反向电压	1000 V	50 V
表面贴装	NO	NO
端子面层	Matte Tin (Sn)	Matte Tin (Sn)
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1