512X8 MICROWIRE BUS SERIAL EEPROM, PDSO8, TSSOP-8
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | SOIC |
| 包装说明 | TSSOP, TSSOP8,.25 |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 备用内存宽度 | 16 |
| 数据保留时间-最小值 | 40 |
| 耐久性 | 1000000 Write/Erase Cycles |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e0 |
| 长度 | 4.4 mm |
| 内存密度 | 4096 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 512 words |
| 字数代码 | 512 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512X8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSSOP |
| 封装等效代码 | TSSOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 并行/串行 | SERIAL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.1 mm |
| 串行总线类型 | MICROWIRE |
| 最大待机电流 | 0.00005 A |
| 最大压摆率 | 0.001 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.65 mm |
| 端子位置 | DUAL |
| 宽度 | 3 mm |
| 写保护 | SOFTWARE |
| Base Number Matches | 1 |
| NM93C66AMT8 | NM93C66AMT8X | NM93C66AMX | NM93C66AN | NM93C66AM | NM93C66AJ | |
|---|---|---|---|---|---|---|
| 描述 | 512X8 MICROWIRE BUS SERIAL EEPROM, PDSO8, TSSOP-8 | 512X8 MICROWIRE BUS SERIAL EEPROM, PDSO8, TSSOP-8 | 512X8 MICROWIRE BUS SERIAL EEPROM, PDSO8, SO-8 | 512X8 MICROWIRE BUS SERIAL EEPROM, PDIP8, DIP-8 | 512X8 MICROWIRE BUS SERIAL EEPROM, PDSO8, SO-8 | 512X8 MICROWIRE BUS SERIAL EEPROM, CDIP8, DIP-8 |
| 零件包装代码 | SOIC | SOIC | SOIC | DIP | SOIC | DIP |
| 包装说明 | TSSOP, TSSOP8,.25 | TSSOP, | SOP, | DIP, DIP8,.3 | SOP, | DIP, |
| 针数 | 8 | 8 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 备用内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| JESD-30 代码 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-GDIP-T8 |
| 内存密度 | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
| 字数 | 512 words | 512 words | 512 words | 512 words | 512 words | 512 words |
| 字数代码 | 512 | 512 | 512 | 512 | 512 | 512 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 组织 | 512X8 | 512X8 | 512X8 | 512X8 | 512X8 | 512X8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED |
| 封装代码 | TSSOP | TSSOP | SOP | DIP | SOP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.1 mm | 1.1 mm | 1.75 mm | 5.08 mm | 1.75 mm | 5.08 mm |
| 串行总线类型 | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE | MICROWIRE |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| 端子节距 | 0.65 mm | 0.65 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 3 mm | 3 mm | 3.9 mm | 7.62 mm | 3.9 mm | 7.62 mm |
| 长度 | 4.4 mm | 4.4 mm | 4.9 mm | 9.817 mm | 4.9 mm | - |
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