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FM25640B-GA

产品描述Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小714KB,共20页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM25640B-GA概述

Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25640B-GA规格参数

参数名称属性值
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

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FM25640B
64-Kbit (8 K × 8) Serial (SPI) Automotive
F-RAM
64-Kbit (8 K × 8) Serial (SPI) Automotive F-RAM
Features
Functional Description
The FM25640B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25640B performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25640B is capable of supporting
10
13
read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the FM25640B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25640B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25640B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an automotive-e temperature
range of –40
C
to +125
C.
For a complete list of related resources,
click here.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
13
High-endurance 10 trillion (10 ) read/writes
121-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 4 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
300
A
active current at 1 MHz
10
A
(typ) standby current at +85
C
Voltage operation: V
DD
= 4.5 V to 5.5 V
Automotive-E temperature: –40
C
to +125
C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
8Kx8
F-RAM Array
Instruction Register
Address Register
Counter
SI
13
8
Data
I/
O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 001-86148 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 14, 2015

FM25640B-GA相似产品对比

FM25640B-GA FM25640B-GATR
描述 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
零件包装代码 SOIC SOIC
包装说明 SOP, SOP,
针数 8 8
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
长度 4.9 mm 4.9 mm
内存密度 65536 bit 65536 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
功能数量 1 1
端子数量 8 8
字数 8192 words 8192 words
字数代码 8000 8000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C
最低工作温度 -40 °C -40 °C
组织 8KX8 8KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
宽度 3.9 mm 3.9 mm
Base Number Matches 1 1

 
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