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FM25640B-G

产品描述Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小436KB,共13页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM25640B-G概述

Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25640B-G规格参数

参数名称属性值
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

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FM25640B
64Kb Serial 5V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 1 Trillion (10
12
) Read/Writes
38 Year Data Retention
NoDelay™ Writes
Advanced high-reliability ferroelectric process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz maximum bus frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
250
A
Active Current (1 MHz)
4
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25640B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 38 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25640B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25640B is capable of
supporting up to 10
12
read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25640B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25640B provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25640B uses the high-speed SPI
bus, which enhances the high-speed write capability
of F-RAM technology. The specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Names
/CS
/HOLD
/WP
SCK
SI
SO
VDD
VSS
Function
Chip Select
Hold
Write Protect
Serial Clock
Serial Data Input
Serial Data Output
5V
Ground
Ordering Information
FM25640B-G
FM25640B-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.0
Jan. 2012
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 13

FM25640B-G相似产品对比

FM25640B-G FM25640B-GTR
描述 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8 Memory Circuit, 8KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
零件包装代码 SOIC SOIC
包装说明 SOP, SOP,
针数 8 8
Reach Compliance Code unknown unknown
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
长度 4.9 mm 4.9 mm
内存密度 65536 bit 65536 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
功能数量 1 1
端子数量 8 8
字数 8192 words 8192 words
字数代码 8000 8000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
组织 8KX8 8KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
宽度 3.9 mm 3.9 mm
Base Number Matches 1 1

 
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