NCN6010
SIM Card Supply and
Level Shifter
The NCN6010 is a level shifter analog circuit designed to translate
the voltages between a SIM Card and an external microcontroller. A
built–in DC/DC converter makes the NCN6010 useable to drive any
type of SIM card. The device fulfills the GSM 11.11 specification. The
external MPU has an access to a dedicated input STOP pin, providing
a way to switch off the power applied to the SIM card in case of failure
or when the card is removed.
Features
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MARKING
DIAGRAM
14
TSSOP–14
CASE 948G
1
1
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
= Work Week
NCN
6010
ALYW
•
•
•
•
•
Supports 3.0 V or 5.0 V Operating SIM Card
Built–in Pull Up Resistor for I/O Pin in Both Directions
All Pins are Fully ESD Protected, According to GSM Specification
Supports 10 MHz Clock
6.0 kV ESD Proof on SIM Card Pins
14
Typical Applications
•
Cellular Phone SIM Interface
•
Identification Module
V
DD
PIN CONNECTIONS
V
DD
1
C4
4.7
µF
1
2
3
P4
P3
P2
P1
P0
4
5
6
7
STOP
MOD_V
CC
PWR_ON
I/O
CLOCK
RESET
Ctb
SIM_IO
GND
SIM_CLK
SIM_RST
GND
9
8
4
C4
3
CLK
2
RST
1
GND V
CC
GND
NCN6010DTB
9
DET
TSSOP–14
96 Units/Rail
NCN6010DTBR2 TSSOP–14 2500 Tape & Reel
12
11
10
Cta
C2
220 nF
V
DD
SIM_V
CC
14
13
STOP 2
C3
1
µF
MOD_VCC 3
PWR_ON 4
I/O 5
CLOCK 6
RESET 7
(Top View)
14 SIM_VCC
13 Cta
12 Ctb
11 SIM_IO
10 GND
9 SIM_CLK
8 SIM_RST
GND
V
CC
MPU or GSM Controller
ORDERING INFORMATION
Device
Package
Shipping
V
pp
8
7
6
5
10
GND
Figure 1. Typical Interface Application
©
Semiconductor Components Industries, LLC, 2001
1
DET
I/O
C8
April, 2001 – Rev. 1
Publication Order Number:
NCN6010/D
NCN6010
STOP
2
ENABLE
14
SIM_V
CC
MOD_V
CC
3
3 V/5 V
13
Cta
POWER UNIT & LOGIC
MANAGEMENT
12
PWR_ON
ENABLE
V
CC
PWR_ON
4
Ctb
V
DD
1
CLOCK
6
9
SIM_CLK
GND
RESET
7
8
SIM_RST
V
DD
GND
V
CC
GND
20 k
I/O
I/O
5
DATA
I/O
GND
10
GND
GROUND
DATA
11
SIM_IO
Figure 2. NCN6010 Block Diagram
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2
20 k
NCN6010
PIN DESCRIPTIONS
Pin
1
Name
V
DD
Type
POWER
Description
This pin is connected to the system controller power supply suitable to operate from
a 3.6 V typical battery. A low ESR ceramic capacitor (4.7
mF
typical) shall be used to
bypass the power supply voltage.
A Low level on this pin resets the SIM interface, switching off the SIM_VCC,
according to the ISO7816–3 Power Down procedure (See Table 1 and Figure 3).
The signal present on this pin programs the SIM_VCC value (See Table 1):
MOD_VCC = L
→
SIM_VCC = 5.0 V
MOD_VCC = H
→
SIM_VCC = 3.0 V
The signal present on this pin controls the SIM_VCC state (See Table 1):
PWR_ON = L
→
SIM_VCC = Open, no supply connected to the SIM card.
PWR_ON = H
→
SIM_VCC = Active, the card is powered.
This pin is connected to an external microcontroller or GSM management unit. A
bi–directional level translator adapts the serial I/O signal between the smart card and
the external controller. A built–in constant 20 kΩ (typical) resistor provides a high
impedance state when not activated.
The clock signal, coming from the external controller, must have a Duty Cycle within
the Min/Max values defined by the specification (typically 50%). The built–in level
shifter translates the input signal to the external SIM card CLK input.
The RESET signal present at this pin is connected to the SIM card. The internal level
shifter translates the level according to the voltages present at pin 1 and the
SIM_VCC programmed value.
This pin is connected to the RESET pin of the card connector. A level translator
adapts the external RESET signal to the SIM card. A built–in active pull down
connects this pin to ground when the device is in a nonoperating mode.
This pin is connected to the CLK pin of the card connector. The CLOCK signal
comes from the external clock generator, the internal level shifter being used to
adapt the voltage defined for the SIM_VCC. A built–in active pull down connects this
pin to ground when the device is in a nonoperating mode.
This pin is the GROUND reference for the integrated circuit and associated signals.
Cares must be observed to avoid voltage spikes when the device operates in a
normal operation.
This pin handles the connection to the serial I/O of the card connector. A
bi–directional level translator adapts the serial I/O signal between the card and the
microcontroller. A 20 kΩ (typical) pull up resistor provides a High impedance state for
the SIM card I/O link.
POWER
POWER
POWER
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the external capacitor used by the internal Charge Pump
converter. Using Low ESR ceramic type is recommended (X5R or X7R).
This pin is connected to the SIM card power supply pin. An internal Charge Pump
converter is programmable by the external MPU to supply either 3.0 V or 5.0 V
output voltage. An external 1.0
µF
minimum ceramic capacitor (ESR
t
100 mW,
X5R or X7R recommended) must be connected across SIM_VCC and GND.
During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a
5.0 V value, or can start directly to any of these two values. When the voltage is
adjusted downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak
current can flow from the external capacitors to the battery during a short amount of
time (in the 1.0
µs
range). When such a voltage adjustment is necessary, it is
recommended to force SIM_VCC to zero, wait 350
µs
minimum, then reprogram the
chip to get SIM_VCC = 3.0 V.
2
3
STOP
MOD_V
CC
INPUT
INPUT
4
PWR_ON
INPUT
5
I/O
INPUT
6
CLOCK
INPUT
7
RESET
INPUT
8
SIM_RST
OUTPUT
9
SIM_CLK
OUTPUT
10
GND
GROUND
11
SIM_I/O
12
13
14
Cta
Ctb
SIM_VCC
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3
NCN6010
MAXIMUM RATINGS
(Note 1.)
Rating
Power Supply
External Card Power Supply and Level Shifter
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Input Voltage
Digital Input Current
Digital Output Voltage
Digital Output Current
Digital Input/Output Voltage
Digital Input/Output Current
Digital Output Voltage
Digital Output Current
Human Body Model: R = 1500
Ω,
C = 100 pF
SIM card side, pins 8, 9, 11 & 14
All other pins
TSSOP–14 Package
Power Dissipation @ T
A
= +85°C
Thermal Resistance Junction to Air
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Symbol
V
DD
SIM_VCC
STOP
RESET
CLOCK
I/O
SIM_RST
SIM_I/O
SIM_CLK
ESD
6.0
2.0
P
D
R
THhja
T
A
T
J
T
Jmax
T
stg
275
145
–25 to +85
–25 to +125
+150
–65 to +150
kV
kV
mW
°C/W
°C
°C
°C
°C
Value
7.0
7.0
–0.3
v
V
v
V
DD
1.0
–0.3
v
V
v
V
DD
1.0
–0.3
v
V
v
V
DD
1.0
–0.3
v
V
v
V
DD
1.0
–0.3
v
V
v
SIM_VCC
25
–0.3
v
V
v
SIM_VCC
25
–0.3
v
V
v
SIM_VCC
50
Unit
V
V
V
mA
V
mA
V
mA
V
mA
V
mA
V
mA
V
mA
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= +25°C.
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NCN6010
POWER SUPPLY SECTION
(–255C to +855C)
Rating
Power Supply
Standby Supply Current @ No Input Clock, All Input
Logic to H, No Load Connected to the SIM Interface.
Ground Current, @ V
DD
= 3.0 V, Operating Conditions:
PWR_ON = 0
SIM_VCC = 5.0 V, I
CC
= 0 mA
SIM_VCC = 5.0 V, I
CC
= 10 mA (Note 2.)
SIM_VCC = 3.0 V, I
CC
= 0 mA
SIM_VCC = 3.0 V, I
CC
= 6.0 mA (Note 2.)
External Card Power Supply at 5.0 V
@ 2.7 V
v
V
DD
v
3.6 V, I
CC
= 10 mA
External Card Power Supply at 3.0 V
@ 2.7 V
v
V
DD
v
3.6 V, I
CC
= 10 mA
Output SIM Card Supply Voltage Turn On Time
Ct = 220 nF, Cout1 = 1.0
µF
"20%
V
DD
= 3.0 V, SIM_VCC = 5.0 V
V
DD
= 3.0 V, SIM_VCC = 3.0 V
Output SIM Card Supply Voltage Turn Off Time
Ct = 220 nF, Cout1 = 1.0
µF
"20%
(Note 3.)
V
DD
= 2.7 V, SIM_VCC = 5.0 V, @ V
LOW
= 0.4 V
V
DD
= 2.7 V, SIM_VCC = 3.0 V, @ V
LOW
= 0.4 V
Output Voltage Ripple (Note 4.)
Ct = 220 nF, Cout1 = 1.0
µF,
Cout2 = 100 nF
V
DD
= 3.0 V, SIM_VCC = 5.0 V, I
CC
= 10 mA
(Not Relevant at SIM_VCC = 3.0 V)
Input Peak Current During DC/DC Startup
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
Input Average Current During Normal Operation,
@ V
DD
= 3.0 V, SIM_VCC = 5.0 V
DC/DC Internal Oscillator
Symbol
V
DD
I V
DD
I V
DD
Pin
1
1
1
Min
2.7
–
–
5.0
125
200
25
40
SIM_VCC
14
4.5
V
DD
– 50 mV
VCC
TON
14
–
1.0
0.5
VCC
TOFF
14
–
–
300
300
VCC
RIP
14
–
–
200
I
DDpk
I
DDavg
Fosc
1
1
–
–
–
–
300
20
800
–
–
–
mA
mA
kHz
mV
µs
V
DD
– 25 mV
5.5
V
DD
ms
V
Typ
–
500
Max
3.6
–
Unit
V
nA
µA
2. The I
DD
current represents the absolute difference between the current absorbed by the load and the one absorbed by the chip.
3. A 350
µs
delay must be observed by the external MPU prior to reactivate the SIM_VCC output.
4. Using low ESR capacitors type (max 100 mΩ) is mandatory for Ct, Cout1 and Cout2 to reach the NCN6010 specifications. Ceramic type
(X5R or X7R) are recommended.
DIGITAL INPUT SECTION CLOCK, RESET, I/O, STOP, MOD_VCC, PWR_ON
Rating
High Level Input Voltage
Low Level Input Voltage
Input Rise Time
Input Fall Time
Input Capacitance
Input @ 45% < Duty Cycle < 55%
Clock Rise Time
Clock Fall Time
Input Clock Capacitance
Input/Output Data Transfer Frequency
I/O Rise Time
I/O Fall Time
Input I/O Capacitance
Symbol
V
IH
V
IL
tr
tf
Cin
CLOCK
Pin
2, 3
4, 5
6, 7
Min
0.7 * V
DD
Typ
–
Max
V
DD
0.3 * V
DD
50
50
10
5.0
50
50
10
160
0.8
0.8
10
Unit
V
V
ns
ns
pF
MHz
ns
ns
pF
kHz
µs
µs
pF
6
–
–
I/O
5
–
15
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