Si1024X
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.70 @ V
GS
= 4.5 V
20
0.85 @ V
GS
= 2.5 V
1.25 @ V
GS
= 1.8 V
I
D
(mA)
600
500
350
FEATURES
D
D
D
D
D
D
D
Very Small Footprint
High-Side Switching
Low On-Resistance: 0.7
W
Low Threshold: 0.8 V (typ)
Fast Swtiching Speed: 10 ns
1.8-V Operation
Gate-Source ESD Protection
BENEFITS
D
D
D
D
D
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
D
Battery Operated Systems
D
Power Supply Converter Circuits
D
Load/Power Switching Cell Phones, Pagers
SOT-563
SC-89
S
1
1
6
D
1
Marking Code: C
G
1
2
5
G
2
D
2
3
4
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
b
Continuous Source Current (diode conduction)
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71170
S-03104—Rev. A, 08-Feb-01
www.vishay.com
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
ESD
T
A
= 25_C
T
A
= 85_C
I
D
I
DM
I
S
450
280
145
–55 to 150
2000
Symbol
V
DS
V
GS
5 secs
20
Steady State
Unit
V
"6
515
370
650
380
250
130
485
350
mA
mW
_C
V
1
Si1024X
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"4.5
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= 5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 600 mA
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 500 m A
V
GS
= 1.8 V, I
D
= 350 m A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= 10 V, I
D
= 400 mA
I
S
= 150 mA, V
GS
= 0 V
700
0.41
0.53
0.70
1.0
0.8
1.2
0.70
0.85
1.25
S
V
W
0.45
"0.5
0.3
"1.0
100
5
V
mA
nA
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
t
ON
t
OFF
V
DD
= 10 V, R
L
= 47
W
I
D
^
200 mA, V
GEN
= 4.5 V, R
G
= 10
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 250 mA
750
75
225
10
36
ns
pC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
Output Characteristics
1.0
1200
Transfer Characteristics
T
C
= –55_C
0.8
I
D
– Drain Current (A)
1000
I
D
- Drain Current (mA)
V
GS
= 5 thru 1.8 V
25_C
800
125_C
600
0.6
0.4
400
0.2
1V
0.0
0.0
200
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71170
S-03104—Rev. A, 08-Feb-01
Si1024X
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
On-Resistance vs. Drain Current
4.0
r
DS(on)
– On-Resistance (
W
)
100
V
GS
= 0 V
f = 1 MHz
C – Capacitance (pF)
3.2
80
C
iss
60
Vishay Siliconix
Capacitance
2.4
1.6
V
GS
= 1.8 V
0.8
V
GS
= 2.5 V
V
GS
= 4.5 V
0.0
0
200
400
600
800
1000
40
C
oss
20
0
0
C
rss
4
8
12
16
20
I
D
– Drain Current (mA)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 250 mA
4
1.60
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.40
V
GS
= 4.5 V
I
D
= 600 mA
3
1.20
V
GS
= 1.8 V
I
D
= 350 mA
1.00
2
1
0.80
0
0.0
0.2
0.4
0.6
0.8
0.60
–50
–25
0
25
50
75
100
125
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1000
T
J
= 125_C
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (mA)
4
5
On-Resistance vs. Gate-to-Source Voltage
I
D
= 350 mA
3
I
D
= 200 mA
2
100
T
J
= 25_C
10
T
J
= –55_C
1
1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71170
S-03104—Rev. A, 08-Feb-01
www.vishay.com
3
Si1024X
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS NOTED)
Threshold Voltage Variance vs. Temperature
0.3
3.0
I
GSS
vs. Temperature
0.2
V
GS(th)
Variance (V)
I
D
= 0.25 mA
0.1
I
GSS
– (mA)
2.5
2.0
–0.0
1.5
–0.1
1.0
V
GS
= 4.5 V
–0.2
0.5
–0.3
–50
–25
0
25
50
75
100
125
0.0
–50
–25
0
25
50
75
100
125
T
J
– Temperature (_C)
T
J
– Temperature (_C)
BV
GSS
vs. Temperature
BV
GSS
– Gate-to-Source Breakdown Voltage (V)
7
6
5
4
3
2
1
0
–50
–25
0
25
50
75
100
125
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 500_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71170
S-03104—Rev. A, 08-Feb-01
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