Product parametric performance is indicated in the Electrical Characteristics for the
listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Uni−Directional
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
% OF PEAK PULSE CURRENT
100
90
80
70
60
50
40
30
20
10
0
0
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
p
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
t
p
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
20
40
t, TIME (ms)
60
80
Figure 1. Steady State Power Derating Curve
Figure 2. 8
X
20
ms
Pulse Waveform
1000
100
I
F
, FORWARD CURRENT (mA)
T
A
= 85°C
−40°C
P
PK
, PEAK POWER (W)
10
100
1
25°C
10
0.1
1
10
100
t
p
, PULSE WIDTH (ms)
1000
0.01
0
0.2
0.8
0.4
0.6
V
F
, FORWARD VOLTAGE (V)
1
1.2
Figure 3. Pulse Rating Curve
Figure 4. Forward Current versus
Forward Voltage
www.onsemi.com
2
MA3075WALT1G, SZMA3075WALT1G
1.2
V
F
, FORWARD VOLTAGE (V)
1
0.8
0.6
0.4
0.2
0
−60
3 mA
10 mA
1000
I
R
, LEAKAGE CURRENT (nA)
100
10
1
0.1
T
A
= 85°C
−40°C
25°C
I
F
= 100 mA
−40
−20
0
40
60
20
T
A
, AMBIENT TEMPERATURE (°C)
80
100
0.01
0
1
4
5
6
2
3
V
R
, REVERSE VOLTAGE (V)
7
8
Figure 5. Forward Voltage versus Temperature
Figure 6. Leakage Current versus
Reverse Voltage
100
I
Z
, ZENER CURRENT (mA)
1000
I
R
, LEAKAGE CURRENT (nA)
V
R
= 6 V
100
V
R
= 5 V
10
T
A
=
−40°C
85°C
25°C
10
1
0.1
0.01
1
V
R
= 1 V
0.1
−60
−40
−20
0
20
40
60
T
A
, AMBIENT TEMPERATURE (°C)
80
100
0.001
5.5
6
7
7.5
6.5
V
Z
, ZENER VOLTAGE (V)
8
8.5
Figure 7. Leakage Current versus Temperature
Figure 8. Zener Current versus
Zener Voltage
90
80
Cd, CAPACITANCE (pF)
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
V
R
, REVERSE VOLTAGE (V)
7
8
f = 1 MHz
T
A
= 25°C
100
R
Z
, OPERATING RESISTANCE (W)
10
1
0.1
0.1
10
1
I
Z
, ZENER CURRENT (mA)
100
Figure 9. Capacitance
Figure 10. Operating Resistance versus
Zener Current
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3
MA3075WALT1G, SZMA3075WALT1G
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
L1
VIEW C
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
3X
b
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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