Preliminary
Datasheet
RJH60D5DPM
Silicon N Channel IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 37 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 75 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 37 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0174EJ0100
Rev.1.00
Nov 15, 2010
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
I
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Note1
Ratings
600
±30
75
37
150
30
120
45
2.78
3.95
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0174EJ0100 Rev.1.00
Nov 15, 2010
Page 1 of 7
RJH60D5DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
t
sc
V
F
t
rr
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
Typ
—
—
—
1.6
2.0
1900
120
60
78
12
36
50
35
130
50
5.0
1.4
100
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
1.9
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 37 A, V
GE
= 15 V
Note3
I
C
=75 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 37 A
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A
Rg = 5
Inductive load
V
CC
360 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/s
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
R07DS0174EJ0100 Rev.1.00
Nov 15, 2010
Page 2 of 7
RJH60D5DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
50
100
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
40
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
80
30
60
20
40
10
20
0
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
Collector Current I
C
(A)
1000
100
PW
160
=
10
10
0
μ
10
s
μ
s
120
80
1
Tc = 25°C
Single pulse
40
0.1
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
150
150
Ta = 25
°
C
Pulse Test
15 V
100
18 V
75
50
25
0
0
1
2
3
4
5
V
GE
= 8 V
Typical Output Characteristics
Ta = 150
°
C
Pulse Test
15 V
100
18 V
75
50
V
GE
= 8 V
25
0
0
1
2
3
4
5
10 V
12 V
12 V
Collector Current I
C
(A)
10 V
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
125
125
Collector to Emitter Voltage V
CE
(V)
R07DS0174EJ0100 Rev.1.00
Nov 15, 2010
Page 3 of 7
RJH60D5DPM
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25
°
C
Pulse Test
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 150
°
C
Pulse Test
I
C
= 37 A
75 A
4
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
6
I
C
= 37 A
75 A
4
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
6
2
2
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Transfer Characteristics (Typical)
150
Diode Forward Characteristics (Typical)
120
Collector Current I
C
(A)
Forward Current I
F
(A)
125
Ta = 25
°
C
100
75
50
25
0
150
°
C
100
80
60
40
20
0
0
Ta = 25
°
C
150
°
C
V
CE
= 10 V
Pulse Test
0
4
8
12
16
V
CE
= 0 V
Pulse Test
1
2
3
4
Gate to Emitter Voltage V
GE
(V)
Forward Voltege V
F
(V)
R07DS0174EJ0100 Rev.1.00
Nov 15, 2010
Page 4 of 7
RJH60D5DPM
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
10000
100
td(off)
tf
td(on)
1000
Eoff
100
Eon
10
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1
10
100 200
1
1
10
100 200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
Swithing Energy Losses E (μJ)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Ta = 25
°
C
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Ta = 25
°
C
td(off)
100
td(on)
tf
tr
1000
Eon
Eoff
10
2
5
10
20
50
100
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
R07DS0174EJ0100 Rev.1.00
Nov 15, 2010
Page 5 of 7
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