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RN1608TE85N

产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小274KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1608TE85N概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN1608TE85N规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR RATIO IS 0.468
最大集电极电流 (IC)0.1 A
基于收集器的最大容量6 pF
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
VCEsat-Max0.3 V
Base Number Matches1

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RN1607~RN1609
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1607, RN1608, RN1609
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in SM6 (super-mini-type with six (6) leads)
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and manufacturing process
Complementary to RN2607~RN2609
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1607
RN1608
RN1609
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
JEITA
TOSHIBA
2-3N1A
Weight: 0.015 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1607~1609
RN1607
Emitter-base voltage
RN1608
RN1609
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1607~1609
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
300
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2007-11-01

RN1608TE85N相似产品对比

RN1608TE85N RN1608TE85R RN1608(TE85R) RN1608TE85L RN1608(TE85L) RN1607(TE85R) RN1607TE85R RN1607TE85L RN1607(TE85L) RN1607TE85N
描述 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 80 80 80 80 80 80 80 80 80
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
元件数量 2 2 2 2 2 2 2 2 2 2
端子数量 6 6 6 6 6 6 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
包装说明 SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 - - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
ECCN代码 EAR99 - EAR99 - EAR99 EAR99 - - EAR99 EAR99
基于收集器的最大容量 6 pF 6 pF - 6 pF - - 6 pF 6 pF - 6 pF
最高工作温度 150 °C 150 °C - 150 °C - - 150 °C 150 °C - 150 °C
VCEsat-Max 0.3 V 0.3 V - 0.3 V - - 0.3 V 0.3 V - 0.3 V
Base Number Matches 1 1 1 1 1 1 1 - - -
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