RN1907~RN1909
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2907 to RN2909
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1907
RN1908
RN1909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
US6
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Unit
V
V
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1907 to
1909
RN1907
Emitter-base voltage
RN1908
RN1909
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1907 to
1909
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
200
150
−55~150
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit
(Top View)
1
2010-05-14
RN1907~RN1909
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN1907 to 1909
RN1907
Emitter cut-off current
RN1908
RN1909
RN1907
DC current gain
RN1908
RN1909
Collector-emitter
saturation voltage
RN1907 to 1909
RN1907
Input voltage (ON)
RN1908
RN1909
RN1907
Input voltage (OFF)
RN1908
RN1909
Transition frequency
Collector output capacitance
RN1907 to 1909
RN1907 to 1909
RN1907
Input resistor
RN1908
RN1909
RN1907
Resistor ratio
RN1908
RN1909
R1/R2
R1
f
T
C
ob
V
I (OFF)
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 5V, I
C
= 0.1mA
V
CE
= 0.2V, I
C
= 5mA
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 5V, I
C
= 10mA
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
EB
= 7V, I
C
= 0
V
EB
= 15V, I
C
= 0
Min
―
―
0.081
0.078
0.167
80
80
70
―
0.7
1.0
2.2
0.5
0.6
1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
250
3
10
22
47
0.213
0.468
2.14
Max
100
500
0.15
0.145
0.311
―
―
―
0.3
1.8
2.6
5.8
1.0
1.16
2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
nA
2
2010-05-14
能源基础设施
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