Datasheet> 器件分类 > 分立半导体> 晶体管> RN2109MFV(TL3PAV)

文档预览

RN2109MFV(TL3PAV): 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon; 产品类别分立半导体晶体管; 文件大小195KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

下载文档详细参数选型对比全文预览

RN2109MFV(TL3PAV)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

RN2109MFV(TL3PAV)规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 0.47
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

RN2107MFV∼RN2109MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107MFV, RN2108MFV, RN2109MFV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

0.22±0.05

Unit: mm

1.2±0.05

0.8±0.05

0.32±0.05

0.13±0.05

1. BASE

2. EMITTER

3. COLLECTOR

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

1.2±0.05

0.8±0.05

0.4

Complementary to the RN1107MFV~RN1109MFV

0.4

A wide range of resistor values is available for use in various circuits.

Equivalent Circuit and Bias Resistor Values

0.5±0.05

Type No.

RN2107MFV

RN2108MFV

RN2109MFV

R1 (kΩ)

R2 (kΩ)

VESM

JEDEC

JEITA

TOSHIBA

―

2-1L1A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107MFV

RN2109MFV

RN2107MFV to

RN2109MFV

RN2107MFV

RN2108MFV

RN2109MFV

(Note 1)

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−100

150

−55

to 150

°C

Unit

Weight: 0.0015 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm

25.4 mm

1.6 mmt)

0.5

0.45

1.15

0.4

0.45

0.4

Start of commercial production

2005-02

2014-03-01

RN2109MFV(TL3PAV)相似产品对比

	RN2109MFV(TL3PAV)	RN2107MFV(TL3MAA)	RN2107MFV(TL3PAV)	RN2108MFV(TL3PAV)
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
包装说明	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknown	unknown	unknown	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 0.47	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 2.14
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	80	80	80
JESD-30 代码	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	-

RN2109MFV(TL3PAV)

RN2109MFV(TL3PAV)概述

RN2109MFV(TL3PAV)规格参数

文档预览

RN2109MFV(TL3PAV)相似产品对比

推荐资源