MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
0.2+/-0.05
(0.22)
RoHS Compliance,
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
4.9+/-0.15
1.0+/-0.05
2
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
3
INDEX MARK
(Gate)
(0.22)
(0.25)
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant
products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
V
GS
=0V
V
DS
=0V
Zg=Zl=50
Ω
Tc=25
°C
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Junction to Case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=1.0W,Idq=1.0A
V
DD
=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50
Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN. TYP. MAX.
-
-
10
-
-
1
1.8
-
4.4
11.5
12
-
55
57
-
Not destroy
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006
2.0+/-0.05
FEATURES
3.5+/-0.05
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
Vgs-Ids CHARACTERISTICS
Ta=+25°C
Vds=10V
RoHS Compliance,
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W)
50
40
On PCB(*1) with Heat-sink
Silicon MOSFET Power Transistor, 175MHz, 12W
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
10
8
Ids(A),GM(S)
6
4
GM
Ids
30
20
10
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
On PCB(*1)
2
0
0
1
2
3
4
Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
Vds VS. Ciss CHARACTERISTICS
160
Vgs=7.5V
Ta=+25°C
f=1MHz
8
7
140
120
Ciss(pF)
100
80
60
40
20
0
Vgs=6.0V
6
Ids(A)
5
4
3
2
1
0
0
2
4
6
Vds(V)
8
10
Vgs=5.5V
Vgs=5.0V
Vgs=4.5V
Vgs=4.0V
Vgs=3.5V
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
120
100
80
Coss(pF)
Crss(pF)
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
RD12MVS1
MITSUBISHI ELECTRIC
2/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
Pin-Po CHARACTERISTICS @f=175MHz
90
Po
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
RoHS Compliance,
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
Silicon MOSFET Power Transistor, 175MHz, 12W
14
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Po
80
η
½
Gp
12
Pout(W) , Idd(A)
10
8
6
4
2
80
70
ηd(%)
10 Jan 2006
30
60
ηd(%)
ηd
60
50
Idd
20
40
10
Ｉ½½
20
40
30
20
1000
0
-5
0
5
10
15
Pin(dBm)
20
25
30
0
0
0
200
400
600
Pin(mW)
800
Vdd-Po CHARACTERISTICS @f=175MHz
25
20
15
Po(W)
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
5
4
8
Vds=10V
Tc=-25~+75°C
6
Ids(A),GM(S)
+25°C
-25°C
+75°C
Idd
3
Idd(A)
4
10
5
0
4
6
8
Vdd(V)
10
12
2
1
0
2
0
0
2
4
Vgs(V)
6
8
RD12MVS1
MITSUBISHI ELECTRIC
3/7
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
Vdd
C2
C3
RoHS Compliance,
TEST CIRCUIT (f=175MHz)
Vgg
Silicon MOSFET Power Transistor, 175MHz, 12W
C1
W
47pF
RF-in
35mm
3mm
L1
10.8nH
W
Contact
3.5mm
Contact
3.5mm 6.0mm 5.0mm
L2
43.7nH
4.7kΩ
33pF
RF-out
25mm 330pF
68pF
330pF
4mm
15pF
12mm
RD12MVS1
24pF
20mm
100pF
Note: Board material - Teflon substrate
L: Enameled wire
Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm L1:4Turns,D:0.43mm,φ1.66mm(outside diameter)
W: line width=1.0mm
L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)
Chip Condencer :GRM40
C1, C2: 1000pF
Copper board spring t=0.1mm
C3: 10uF, 50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14
f=175MHz Zin*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
RD12MVS1
MITSUBISHI ELECTRIC
4/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
S12
S22
(ang)
-3.3
1.4
-10.9
-14.1
-18.2
-18.3
-15.1
-30.4
-29.9
-24.5
-39.4
-53.1
-32.9
-32.2
-29.2
-21.6
-32.5
-37.2
-25.9
-21.3
-46.6
-25.0
-40.9
-33.6
17.7
25.4
51.4
5.7
5.6
-16.1
58.8
-6.7
40.4
77.0
46.5
64.5
60.3
69.7
80.3
86.7
(mag)
0.761
0.765
0.778
0.787
0.800
0.796
0.810
0.836
0.858
0.855
0.859
0.860
0.886
0.898
0.898
0.893
0.903
0.910
0.917
0.925
0.922
0.922
0.939
0.939
0.938
0.930
0.932
0.946
0.949
0.940
0.935
0.943
0.945
0.948
0.946
0.950
0.946
0.952
0.959
0.950
(ang)
-160.3
-168.1
-170.7
-170.3
-171.7
-172.3
-172.3
-172.2
-172.2
-173.0
-173.3
-173.4
-174.5
-174.6
-175.0
-175.6
-175.7
-176.6
-176.8
-177.3
-177.6
-177.6
-178.0
-178.9
-179.3
-179.5
-179.9
-179.9
179.3
179.0
178.8
178.2
177.5
176.8
176.7
176.7
176.0
175.7
175.0
174.8
(mag)
0.018
0.016
0.016
0.016
0.016
0.015
0.016
0.012
0.014
0.013
0.012
0.012
0.014
0.012
0.009
0.009
0.009
0.004
0.008
0.007
0.005
0.006
0.004
0.003
0.003
0.003
0.003
0.002
0.004
0.001
0.004
0.002
0.003
0.003
0.006
0.003
0.007
0.006
0.003
0.003
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
[MHz]
25
50
75
100
125
150
175
200
225
250
275
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
S11
(mag)
0.824
0.816
0.817
0.829
0.837
0.845
0.852
0.860
0.870
0.876
0.886
0.891
0.902
0.903
0.909
0.907
0.912
0.923
0.928
0.934
0.932
0.936
0.932
0.935
0.939
0.939
0.943
0.945
0.943
0.939
0.943
0.948
0.951
0.953
0.952
0.954
0.944
0.951
0.954
0.955
(ang)
-159.3
-169.0
-171.7
-172.8
-173.4
-173.9
-174.0
-174.3
-175.0
-175.0
-175.6
-175.8
-175.9
-176.2
-176.7
-177.6
-177.9
-178.3
-178.5
-178.6
-178.8
-179.2
179.6
179.1
179.2
179.4
179.1
178.7
177.5
177.2
176.9
176.8
177.1
176.7
176.1
175.4
174.4
174.6
175.0
175.0
S21
(mag)
26.397
13.193
8.716
6.537
5.110
4.117
3.402
2.896
2.525
2.175
1.897
1.675
1.496
1.348
1.208
1.087
0.996
0.912
0.836
0.748
0.707
0.647
0.591
0.562
0.520
0.485
0.460
0.435
0.407
0.380
0.358
0.327
0.308
0.314
0.284
0.269
0.254
0.250
0.232
0.227
(ang)
93.4
85.2
79.3
74.5
68.5
64.2
60.8
57.2
53.2
48.9
46.5
43.6
41.0
38.3
35.7
33.7
31.6
29.7
27.9
25.8
23.6
23.2
20.8
20.0
17.4
15.5
15.6
15.5
13.3
12.2
10.8
8.6
8.0
8.5
7.0
9.7
6.7
6.0
1.9
7.8
RD12MVS1
MITSUBISHI ELECTRIC
5/7
10 Jan 2006
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