电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RN2707TE85L

产品描述TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
产品类别分立半导体    晶体管   
文件大小313KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN2707TE85L概述

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN2707TE85L规格参数

参数名称属性值
Reach Compliance Codeunknown
其他特性BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC)0.1 A
基于收集器的最大容量6 pF
集电极-发射极最大电压50 V
配置COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-G5
元件数量2
端子数量5
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1

文档预览

下载PDF文档
RN2707~RN2709
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2707,RN2708,RN2709
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1707 to RN1709
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2707
RN2708
RN2709
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
USV
JEDEC
JEITA
TOSHIBA
2-2L1A
Weight: 6.2 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN2707 to 2709
RN2707
Emitter-base voltage
RN2708
RN2709
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2707 to 2709
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
(top view)
Equivalent Circuit
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2010-05-12

RN2707TE85L相似产品对比

RN2707TE85L RN2707(TE85L) RN2707(TE85R) RN2707TE85R
描述 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknown unknown unknown unknown
其他特性 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 80 80 80 80
JESD-30 代码 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
元件数量 2 2 2 2
端子数量 5 5 5 5
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz
Base Number Matches 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1150  316  1558  2537  1090  24  7  32  52  22 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved