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MAAP-008171-004SMB

产品描述High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB
文件大小204KB,共4页
制造商MACOM
官网地址http://www.macom.com
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MAAP-008171-004SMB概述

High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB

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RoHS
Compliant
High Power PHEMT
600 – 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB
Features
Ideal for WiMax, MESH Network, and Linear
Applications
Small Signal Gain: 11 dB Typical
EVM: 2.5% at 30 dBm Linear (OFDM) P
OUT
Includes thermally-coupled reference FET for use
in external biasing circuit
Lead-Free 4 mm 16 lead PQFN Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
MAAP-008171
V2P
Block Diagram
Description
M/A-Com's MAAP-008171 is an unmatched high
power GaAs pHEMT which exhibits high gain and
linearity performance in a lead-free 4mm PQFN 16-
Lead surface mount plastic package. This part is
tunable over a frequency range from 600 MHz to
4000 MHz making it ideal many linear applications
such as CDMA, WCDMA, and WiMax.
This part can achieve 27 dBm /30 dBm Linear Pout
when measured for 802.16d (EVM < 2.5%) when
operated @ 12V. It also contains a thermally-
coupled reference transistor to allow simple current
mirror biasing.
The MAAP-008171 is fabricated using a high
reliability GaAs PHEMT process to realize low
current and high power functionality. The process
features full passivation for increased performance
and reliability.
Pin Configuration
Pin No.
1
2
3
4
5-8
9-12
13-16
17
Pin Name
Sense_S
Sense_D
Sense_G
N/C
RF
IN
N/C
RF
OUT
Paddle
2
Description
Source of Reference Device
Drain of Reference Device
Gate of Reference Device
No Connection
RF Input/Gate Bias
No Connection
RF Output/Drain Bias
RF & DC Ground
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
Ordering Information
1
Part Number
MAAP-008171-TR3000
MAAP-008171-001SMB
MAAP-008171-002SMB
MAAP-008171-003SMB
MAAP-008171-004SMB
Absolute Maximum Ratings
3,4
Package
3000 piece reel
Parameter
Input Power
Operating Supply Voltage
Gate Voltage
Operating Temperature
Channel Temperature
Storage Temperature
Absolute Maximum
+ 32 dBm
+12.0 Volts
+1 Volts
-30 °C to +85 °C
+150 °C
-40 °C to +150 °C
900 MHz Sample Test Board
(Includes 5 Samples)
1.9 GHz Sample Test Board
(Includes 5 Samples)
2.5 GHz Sample Test Board
(Includes 5 Samples)
3.5 GHz Sample Test Board
(Includes 5 Samples)
1. Reference Application Note M513 for reel size information.
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. M/A-COM does not recommend sustained operation near
these survivability limits.
This PRELIMINARY Data Sheet contains information regarding a product M/A-COM is considering for development. Performance
is based on simulated results or target specifications. Commitment to produce in volume is not guaranteed.
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.

MAAP-008171-004SMB相似产品对比

MAAP-008171-004SMB MAAP-008171 MAAP-008171-002SMB MAAP-008171-TR3000 MAAP-008171-001SMB MAAP-008171-003SMB
描述 High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB

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