MAC12HCDG, MAC12HCMG,
MAC12HCNG
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
Features
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Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Commutating di/dt and High Immunity to dv/dt @ 125°C
Minimizes Snubber Networks for Protection
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Industry Standard TO-220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
These Devices are Pb−Free and are RoHS Compliant*
TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= − 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12HCDG
MAC12HCMG
MAC12HCNG
On-State RMS Current
(All Conduction Angles; T
C
= 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
T
J
T
stg
12
100
41
16
0.35
−40 to +125
−40 to +150
A
A
A
2
sec
W
W
Value
Unit
V
1
2
3
x
A
Y
WW
G
TO−220
CASE 221A
STYLE 4
MAC12HCxG
AYWW
= D, M, or N
= Assembly Location (Optional)*
= Year
= Work Week
= Pb−Free Package
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
PIN ASSIGNMENT
°C
°C
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
MAC12HCDG
MAC12HCMG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
MAC12HCNG
1
November, 2014 − Rev. 5
Publication Order Number:
MAC12HC/D
MAC12HCDG, MAC12HCMG, MAC12HCNG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.2
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
, Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
17 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±150
mA)
Latch Current (V
D
= 12 V, I
G
= 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 4.4 A, Commutating dv/dt = 18 V/ms, Gate Open,
T
J
= 125°C, f = 250 Hz, C
L
= 10
mF,
L
L
= 40 mH, with Snubber)
Critical Rate of Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform,
Gate Open, T
J
= 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
msec;
diG/dt = 200 mA/msec; f = 60 Hz
(di/dt)
c
15
−
−
A/ms
V
TM
−
I
GT
10
10
10
I
H
−
I
L
−
−
−
V
GT
0.5
0.5
0.5
−
−
−
1.5
1.5
1.5
−
−
−
60
80
60
V
−
60
mA
−
−
−
50
50
50
mA
−
1.85
mA
V
I
DRM
, I
RRM
T
J
= 25°C
T
J
= 125°C
−
−
−
−
0.01
2.0
mA
Symbol
Min
Typ
Max
Unit
dv/dt
600
−
−
V/ms
di/dt
−
−
10
A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
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MAC12HCDG, MAC12HCMG, MAC12HCNG
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC12HCDG, MAC12HCMG, MAC12HCNG
100
VGT, GATE TRIGGER VOLTAGE (VOLT)
IGT, GATE TRIGGER CURRENT (mA)
Q3
Q2
Q1
10
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
- 40 - 25 - 10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
125
Q1
Q2
Q3
1
- 40 - 25 - 10
5
20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110
125
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
MT2 NEGATIVE
HOLDING CURRENT (mA)
LATCHING CURRENT (mA)
100
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Q2
Q3
Q1
MT2 POSITIVE
10
10
1
- 40 - 25 - 10
5
20 35 50 65 80 95
T
J
, JUNCTION TEMPERATURE (°C)
110
125
1
- 40 - 25 - 10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
125
Figure 3. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
125
TC, CASE TEMPERATURE (
°
C)
120°, 90°, 60°, 30°
110
20
18
16
14
12
10
8
6
4
2
0
0
Figure 4. Typical Latching Current
versus Junction Temperature
DC
180°
120°
95
180°
80
DC
65
0
2
4
6
8
10
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
12
90°
60°
30°
2
4
6
8
10
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
12
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
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MAC12HCDG, MAC12HCMG, MAC12HCNG
100
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
TYPICAL @
T
J
= 25°C
MAXIMUM @ T
J
= 125°C
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
10
0.1
MAXIMUM @ T
J
= 25°C
1
0.01
0.1
1
10
100
t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0.1
0
4
4.5
0.5
1
1.5
2
2.5
3
3.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
5
Figure 7. Typical On-State Characteristics
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