Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
17 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±200
mA)
Latching Current (V
D
= 12 V, I
G
= 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V
D
= 400 V, I
TM
= 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, T
J
= 110°C,
f = 500 Hz, Snubber: Cs = 0.01
mf,
Rs = 15
W)
Critical Rate of Rise of Off-State Voltage
(V
D
= 67% V
DRM
, Exponential Waveform, R
GK
= 1 KW, T
J
= 110°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40
msec;
diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
(di/dt)
c
8.0
10
−
A/ms
V
TM
I
GT
−
−
−
I
H
I
L
−
−
−
V
GT
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
3.0
5.0
3.0
15
20
15
V
−
1.5
2.5
2.7
2.5
5.0
5.0
5.0
10
mA
mA
−
−
1.85
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
dV/dt
di/dt
15
−
40
−
−
10
V/ms
A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
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2
MAC12SM, MAC12SN
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
IGT, GATE TRIGGER CURRENT (mA)
100
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.90
0.85
Q1
0.80 Q3
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
−40 −25 −10
5
20 35
50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
Q2
10
Q3
Q2
Q1
1
0.1
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
95 110
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
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3
MAC12SM, MAC12SN
100
IL , LATCHING CURRENT (mA)
100
IH, HOLDING CURRENT (mA)
10
Q1
Q2
Q3
10
MT2 Positive
1
MT2 Negative
1
0.1
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
0.1
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95 110
Figure 3. Typical Latching Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110
TC , CASE TEMPERATURE (
°
C)
25
Figure 4. Typical Holding Current
versus Junction Temperature
100
30°, 60°
90
90°
80
180°
70
DC
60
0
10
4
6
8
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
2
12
20
90°
60°
10
DC
180°
120°
15
30°
5
0
0
4
10
2
6
8
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
12
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Typical @ T
J
= 25°C
Maximum @ T
J
= 110°C
Maximum @ T
J
= 25°C
10
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
100
1
0.1
1
0.01
0.1
1
10
100
t, TIME (ms)
1000
10000
Figure 8. Typical Thermal Response
0.1
0.5
1.5
2.5
3.5
4.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
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4
MAC12SM, MAC12SN
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and the
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