PZT 3906
PNP Silicon Switching Transistor
•
High DC current gain: 0.1mA to 100mA
•
Low collector-emitter saturation voltage
•
Complementary type: PZT 3904 (NPN)
4
3
2
1
VPS05163
Type
PZT 3906
Maximum Ratings
Parameter
Marking
ZT 3906
1=B
Pin Configuration
2=C
3=E
4=C
Package
SOT-223
Unit
V
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Value
40
40
5
200
1.5
150
-65 ... 150
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation,
T
S
= 80 °C
Junction temperature
Storage temperature
mA
W
°C
Thermal Resistance
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤117
≤47
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
1
Oct-13-1999
PZT 3906
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 30 V,
V
BE
= 0.5
Base-emitter cutoff current
V
CE
= 30 V, +V
BE
= 0.5
DC current gain 1)
I
C
= 0.1 mA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
BEsat
-
-
-
-
0.85
0.95
V
CEsat
-
-
-
-
0.25
0.4
h
FE
60
80
100
60
30
-
-
-
-
-
-
-
300
-
-
I
BEV
-
-
50
I
CEV
-
-
50
I
CBO
-
-
50
V
(BR)EBO
5
-
-
V
(BR)CBO
40
-
-
V
(BR)CEO
40
-
-
typ.
max.
Unit
V
nA
-
V
1) Pulse test: t
≤
300
µ
s, D = 2%
2
Oct-13-1999
PZT 3906
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
R
S
= 1
kΩ,
f
= 10Hz to 15.7kHz,
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Short-circuit forward current transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=I
B2
= 1mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=I
B2
= 1mA
t
f
-
-
75
t
stg
-
-
225
t
r
-
-
35
t
d
-
-
35
h
22e
3
-
60
h
21e
100
-
400
h
12e
0.1
-
10
h
11e
2
-
12
F
-
-
4
C
eb
-
-
10
C
cb
-
-
4.5
f
T
250
-
-
typ.
max.
Unit
MHz
pF
dB
kΩ
10
-4
-
µS
ns
3
Oct-13-1999
PZT 3906
Switching Times
Turn-on time when switched from +
V
BEoff
= 0.5B to -
V
BEon
= 10.6V, -
I
Con
= 10mA
-
I
Bon
= 1mA
-3.0 V
275
Ω
V
i
(V)
+0.5
0
t
-10.6
t
r
t
p
EHN00057
D.U.T.
V
i
10 k
Ω
C
s
V
o
Input waveform;
t
r
< 1ns;
t
p
= 300 ns
δ
= 0.002
Delay and rise time test circuit; total shunt
capacitance of test jig and connectors
C
s
< 4pF; scope impedance = 10M
Ω
Turn-off time
I
Con
= 10mA;
I
Bon
= 1mA
-3.0 V
V
i
(V)
+9.1
0
-10.9
t
p
t
f
V
i
10 k
Ω
D.U.T.
275
Ω
V
o
C
s
1N916
t
EHN00058
Input waveform;
t
r
< 1ns; 10
µ
s <
t
p
≤
500
µ
s
δ
= 0.02
Storage and fall time test circuit; total shunt
capacitance of test jig and connectors
C
s
< 4pF; scope impedance = 10M
Ω
4
Oct-13-1999
PZT 3906
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
Saturation voltage
I
C
=
f
(
V
BEsat
,
V
CEsat
)
h
FE
= 10
* Package mounted on epoxy
1.6
P
tot
W
1.2
1.0
0.8
0.6
PZT 3906
EHP00713
2
mA
PZT 3906
EHP00714
Ι
C
10
2
5
V
CE
T
A
T
S
V
BE
10
1
5
0.4
0.2
0.0
10
0
0
50
100
˚C
T
A
;
T
S
150
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE sat
,
V
CE sat
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
PZT 3906
EHP00302
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5V
10
1
PZT 3906
EHP00715
5
P
tot max
P
tot DC
10
2
5
t
p
D
=
T
t
p
h
FE
T
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
125 ˚C
10
0
25 ˚C
5
-55 ˚C
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
-1
-1
10
5 10
0
5 10
1
mA
10
2
Ι
C
5
Oct-13-1999
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